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參數(shù)資料
| 型號(hào)： | M29W017D70N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| 中文描述： | 16兆位的2Mb × 8，統(tǒng)一座3V電源快閃記憶體 |
| 文件頁數(shù)： | 5/36頁 |
| 文件大?。?/td> | 251K |
| 代理商： | M29W017D70N1T |
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M29W017D
SUMMARY DESCRIPTION
The M29W017D is a 16 Mbit (2Mb x8) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single low voltage (2.7 to 3.6V) supply. On
power-up the memory defaults to its Read mode
where it can be read in the same way as a ROM or
EPROM.
The memory is divided into 32 blocks of 64KBytes
(see Table 16, Block Addresses) that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP40 (10 x 20mm) and
TFBGA48 (0.8mm pitch) packages. The memory is
supplied with all the bits erased (set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI04186
21
A0-A20
W
DQ0-DQ7
VCC
M29W017D
E
VSS
8
G
RP
RB
A0-A20
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W017D70N6T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90N1T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90N6T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90ZA1T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90ZA6T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W017D70N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D70ZA6 | 功能描述:閃存 16M (2Mx8) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W017D70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90N1 | 功能描述:閃存 16M (2Mx8) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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