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參數(shù)資料
| 型號(hào)： | M29W017D90N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| 中文描述： | 16兆位的2Mb × 8，統(tǒng)一座3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 29/36頁(yè) |
| 文件大?。?/td> | 251K |
| 代理商： | M29W017D90N1T |
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M29W017D
Table 19. CFI Query System Interface Information
Table 20. Device Geometry Definition
Address
Data
Description
Value
1Bh
27h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
36h
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
00h
V
PP
[Programming] Supply Minimum Program/Erase voltage
NA
1Eh
00h
V
PP
[Programming] Supply Maximum Program/Erase voltage
NA
1Fh
04h
Typical timeout per single byte/word program = 2
n
μs
16μs
20h
00h
Typical timeout for minimum size write buffer program = 2
n
μs
NA
21h
0Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
00h
Typical timeout for full chip erase = 2
n
ms
NA
23h
04h
Maximum timeout for byte/word program = 2
n
times typical
256μs
24h
00h
Maximum timeout for write buffer program = 2
n
times typical
NA
25h
03h
Maximum timeout per individual block erase = 2
n
times typical
8s
26h
00h
Maximum timeout for chip erase = 2
n
times typical
NA
Address
Data
Description
Value
27h
15h
Device Size = 2
n
in number of bytes
2 MByte
28h
29h
00h
00h
Flash Device Interface Code description
x8
Async.
2Ah
2Bh
00h
00h
Maximum number of bytes in multi-byte program or page = 2
n
NA
2Ch
01h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
1
2Dh
2Eh
1Fh
00h
Region 1 Information
Number of identical size erase block = 001Fh+1
32
2Fh
30h
00h
01h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64 KByte
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W017D90N6T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90ZA1T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90ZA6T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D70ZA6T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D70ZA1T | 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W017D90N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W017D90ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory |
| M29W022 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W022BB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
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