參數(shù)資料
型號: M29W040B90K6F
廠商: 意法半導(dǎo)體
英文描述: 5W + 5W Stereo Speaker / Headphone Amplifiers; Package: SIP-M12; Constitution materials list: Packing style: Tube packaging; Package quantity: 300; Minimum package quantity: 300;
中文描述: 4兆位512KB的× 8,統(tǒng)一座低電壓單電源閃存
文件頁數(shù): 3/20頁
文件大?。?/td> 161K
代理商: M29W040B90K6F
3/20
M29W040B
SIGNAL DESCRIPTIONS
See Figure 1, Logic Diagram, and Table 1, Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A18).
The Address Inputs
select the cells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
Data Inputs/Outputs (DQ0-DQ7).
The Data In-
puts/Outputs output the data stored at the selected
address during a Bus Read operation. During Bus
Write operations they represent the commands
sent to the Command Interface of the internal state
machine.
Chip Enable (E).
The Chip Enable, E, activates
the memory, allowing Bus Read and Bus Write op-
erations to be performed. When Chip Enable is
High, V
IH
, all other pins are ignored.
Output Enable (G).
The Output Enable, G, con-
trols the Bus Read operation of the memory.
Write Enable (W).
The Write Enable, W, controls
the Bus Write operation of the memory’s Com-
mand Interface.
V
CC
Supply Voltage.
The V
CC
Supply Voltage
supplies the power for all operations (Read, Pro-
gram, Erase etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout Voltage,
V
LKO
. This prevents Bus Write operations from ac-
cidentally damaging the data during power-up,
power-down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memo-
ry contents being altered will be invalid.
A 0.1μF capacitor should be connected between
the V
CC
Supply Voltage pin and the V
SS
Ground
pin to decouple the current surges from the power
supply. The PCB track widths must be sufficient to
carry the currents required during program and
erase operations, I
CC3
.
V
SS
Ground.
The V
SS
Ground is the reference for
all voltage measurements.
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°C
Ambient Operating Temperature (Temperature Range Option 6)
–40 to 85
°C
T
BIAS
Temperature Under Bias
–50 to 125
°C
T
STG
Storage Temperature
–65 to 150
°C
V
IO (2)
Input or Output Voltage
–0.6 to 4
V
V
CC
Supply Voltage
–0.6 to 4
V
V
ID
Identification Voltage
–0.6 to 13.5
V
Table 3. Uniform Block Addresses, M29W040B
Size
(Kbytes)
7
64
6
64
5
64
4
64
3
64
2
64
1
64
0
64
#
Address Range
70000h-7FFFFh
60000h-6FFFFh
50000h-5FFFFh
40000h-4FFFFh
30000h-3FFFFh
20000h-2FFFFh
10000h-1FFFFh
00000h-0FFFFh
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W040B90K6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B90N1 功能描述:閃存 4M (512Kx8) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W040B90N1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B90N1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B90N1T 功能描述:閃存 4M (512Kx8) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel