參數資料
型號: M29W160DB90N1T
廠商: 意法半導體
英文描述: Dual Positive-Edge-Triggered D-Type Flip-Flop 8-DSBGA -40 to 85
中文描述: 16兆位的2Mb x8或1兆x16插槽,啟動塊3V電源快閃記憶體
文件頁數: 28/40頁
文件大?。?/td> 665K
代理商: M29W160DB90N1T
M29W160ET, M29W160EB
28/40
PART NUMBERING
Table 18. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device,
please contact the ST Sales Office nearest to you.
Example:
M29W160EB
90
N
6
T
Device Type
M29
Operating Voltage
W = V
CC
= 2.7 to 3.6V
Device Function
160E = 16 Mbit (x8/x16), Boot Block
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
70 = 70 ns
90 = 90 ns
Package
N = TSOP48: 12 x 20 mm
ZA = TFBGA48: 6x8 mm, 0.80mm pitch
Temperature Range
6 = –40 to 85 °C
Option
Blank = Standard Packing
T = Tape and Reel Packing
E = Lead-free Package, Standard Packing
F = Lead-free Package, Tape & Reel Packing
相關PDF資料
PDF描述
M29W160DB90N6T 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
M29W160DB90ZA1T 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
M29W160DB90ZA6T DUAL 2-INPUT EXCLUSIVE-OR GATE 8-DSBGA -40 to 85
M29W160DT 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
M29W160DT70M1T 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
相關代理商/技術參數
參數描述
M29W160DB90N6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB90N6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB90N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB90N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB90ZA1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory