參數(shù)資料
型號: M29W160DT70M1F
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(含2Mb x8或1兆x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁數(shù): 20/44頁
文件大?。?/td> 333K
代理商: M29W160DT70M1F
M29W160DT, M29W160DB
20/44
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 9, Operating and
AC Measurement Conditions. Designers should
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Table 9. Operating and AC Measurement Conditions
Figure 10. AC Measurement I/O Waveform
Figure 11. AC Measurement Load Circuit
Table 10. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
M29W160D
Unit
70
90
Min
Max
Min
Max
V
CC
Supply Voltage
3.0
3.6
2.7
3.6
V
Ambient Operating Temperature
–40
85
–40
85
°C
Load Capacitance (C
L
)
30
30
pF
Input Rise and Fall Times
10
10
ns
Input Pulse Voltages
0 to V
CC
0 to V
CC
V
Input and Output Timing Ref. Voltages
V
CC
/2
V
CC
/2
V
AI04498
VCC
0V
VCC/2
AI04499
CL
CL includes JIG capacitance
DEVICE
UNDER
TEST
25k
VCC
25k
VCC
0.1μF
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
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