參數(shù)資料
型號(hào)： M29W200BT120M6T
廠商： 意法半導(dǎo)體
英文描述： 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory
中文描述： 2兆位的256Kb x8或128KB的x16插槽，引導(dǎo)塊低壓?jiǎn)坞娫撮W存
文件頁(yè)數(shù)： 3/22頁(yè)
文件大?。?/td> 144K
代理商： M29W200BT120M6T
3/22
M29W200BT, M29W200BB
The blocks in the memory are asymmetrically ar-
ranged, seeTables 3 and 4, Block Addresses.The
first or last 64 Kbytes have been divided into four
additional blocks. The 16 Kbyte Boot Block can be
used for small initialization code to start the micro-
processor, the two 8 Kbyte Parameter Blocks can
be used for parameter storage and the remaining
32K is a small Main Block where the application
may be stored.
Chip Enable, Output Enableand Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP48 (12 x 20mm)
and SO44 packages and it is supplied with all the
bits erased (set to ’1’).
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating ”O(jiān)perating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Referalso to the STMicroelectronics SUREProgram andother relevant qual-
ity documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°
C
Ambient Operating Temperature (Temperature Range Option 6)
–40 to 85
°
C
T
BIAS
Temperature Under Bias
–50 to 125
°
C
T
STG
Storage Temperature
–65 to 150
°
C
V
IO(2)
Input or Output Voltage
–0.6 to 4
V
V
CC
Supply Voltage
–0.6 to 4
V
V
ID
Identification Voltage
–0.6 to 13.5
V
Table 3. Top Boot Block Addresses
M29W200BT
Size
(Kbytes)
6
16
3C000h-3FFFFh
5
8
3A000h-3BFFFh
4
8
38000h-39FFFh
3
32
30000h-37FFFh
2
64
20000h-2FFFFh
1
64
10000h-1FFFFh
0
64
00000h-0FFFFh
#
Address Range
(x8)
Address Range
(x16)
1E000h-1FFFFh
1D000h-1DFFFh
1C000h-1CFFFh
18000h-1BFFFh
10000h-17FFFh
08000h-0FFFFh
00000h-07FFFh
Table 4. Bottom Boot Block Addresses
M29W200BB
Size
(Kbytes)
(x8)
6
64
30000h-3FFFFh
5
64
20000h-2FFFFh
4
64
10000h-1FFFFh
3
32
08000h-0FFFFh
2
8
06000h-07FFFh
1
8
04000h-05FFFh
0
16
00000h-03FFFh
#
Address Range
Address Range
(x16)
18000h-1FFFFh
10000h-17FFFh
08000h-0FFFFh
04000h-07FFFh
03000h-03FFFh
02000h-02FFFh
00000h-01FFFh
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M29W200BT70M1 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W200BT70N1 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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M29W200BT90N6 功能描述:閃存 256Kx8 or 128Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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