參數(shù)資料
型號(hào)： M29W320DB70N1T
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
中文描述： 32兆位4Mb的x8或功能的2Mb x16插槽，啟動(dòng)塊3V電源快閃記憶體
文件頁(yè)數(shù)： 13/46頁(yè)
文件大小： 853K
代理商： M29W320DB70N1T
13/46
M29W320DT, M29W320DB
BUS OPERATIONS
There are five standard bus operations that control
the device. These are Bus Read, Bus Write, Out-
put Disable, Standby and Automatic Standby. See
Figure 8. and Table 2., Bus Operations, for a sum-
mary. Typically glitches of less than 5ns on Chip
Enable or Write Enable are ignored by the memory
and do not affect bus operations.
Bus Read.
Bus Read operations read from the
memory cells, or specific registers in the Com-
mand Interface. A valid Bus Read operation in-
volves setting the desired address on the Address
Inputs, applying a Low signal, V
IL
, to Chip Enable
and Output Enable and keeping Write Enable
High, V
IH
. The Data Inputs/Outputs will output the
value, see Figure 13., Read Mode AC Waveforms,
and Table 11., Read AC Characteristics, for de-
tails of when the output becomes valid.
Bus Write.
Bus Write operations write to the
Command Interface. A valid Bus Write operation
begins by setting the desired address on the Ad-
dress Inputs. The Address Inputs are latched by
the Command Interface on the falling edge of Chip
Enable or Write Enable, whichever occurs last.
The Data Inputs/Outputs are latched by the Com-
mand Interface on the rising edge of Chip Enable
or Write Enable, whichever occurs first. Output En-
able must remain High, V
IH
, during the whole Bus
Write operation. See Figure 14. and Figure 15.,
Write AC Waveforms, and Table 12. and Table
13., Write AC Characteristics, for details of the tim-
ing requirements.
Output Disable.
The Data Inputs/Outputs are in
the high impedance state when Output Enable is
High, V
IH
.
Standby.
When Chip Enable is High, V
IH
, the
memory enters Standby mode and the Data In-
puts/Outputs pins are placed in the high-imped-
ance state. To reduce the Supply Current to the
Standby Supply Current, I
CC2
, Chip Enable should
be held within V
CC
± 0.2V. For the Standby current
level see Table 10., DC Characteristics.
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, I
CC3
, for Program or Erase operations un-
til the operation completes.
Automatic Standby.
If CMOS levels (V
CC
± 0.2V)
are used to drive the bus and the bus is inactive for
300ns or more the memory enters Automatic
Standby where the internal Supply Current is re-
duced to the Standby Supply Current, I
CC2
. The
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus opera-
tions are intended for use by programming equip-
ment and are not usually used in applications.
They require V
ID
to be applied to some pins.
Electronic Signature.
The memory has two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Figure 8. and Table 2., Bus Operations.
Block Protect and
Chip Unprotect.
Each
can be separately protected against accidental
Program or Erase. The whole chip can be unpro-
tected to allow the data inside the blocks to be
changed.
Block Protect and Chip Unprotect operations are
described in APPENDIX C..
block
Figure 8. Bus Operations, BYTE = V
IL
Note: X = V
IL
or V
IH
.
Operation
E
G
W
Address Inputs
DQ15A–1, A0-A20
Data Inputs/Outputs
DQ14-DQ8
DQ7-DQ0
Bus Read
V
IL
V
IL
V
IH
Cell Address
Hi-Z
Data Output
Bus Write
V
IL
V
IH
V
IL
Command Address
Hi-Z
Data Input
Output Disable
X
V
IH
V
IH
X
Hi-Z
Hi-Z
Standby
V
IH
X
X
X
Hi-Z
Hi-Z
Read Manufacturer
Code
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IL
, A9 = V
ID
,
Others V
IL
or V
IH
Hi-Z
20h
Read Device Code
V
IL
V
IL
V
IH
A0 = V
IH
, A1 = V
IL
,
A9 = V
ID
, Others V
IL
or V
IH
Hi-Z
CAh (M29W320DT)
CBh (M29W320DB)
相關(guān)PDF資料
PDF描述
M29W320DB70N6 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB70N6E 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB70N6F 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB70N6T 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB70ZA1 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W320DB70N3E 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 32MBIT 70NS 48TSOP
M29W320DB70N3F 功能描述:IC FLASH 32MBIT 70NS 3V 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x20） 包裝:托盤
M29W320DB70N6 功能描述:閃存 4Mx8 or 2Mx16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320DB70N6E 功能描述:閃存 4Mx8 or 2Mx16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320DB70N6F 功能描述:閃存 STD FLASH 32 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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