參數(shù)資料
型號: M29W320DB90N1T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
中文描述: 32兆位4Mb的x8或功能的2Mb x16插槽,啟動塊3V電源快閃記憶體
文件頁數(shù): 25/46頁
文件大?。?/td> 853K
代理商: M29W320DB90N1T
25/46
M29W320DT, M29W320DB
Table 10. DC Characteristics
Note: 1. Sampled only, not 100% tested.
Symbol
Parameter
Test Condition
Min
Typ.
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
±1
μ
A
I
LO
Output Leakage Current
0V
V
OUT
V
CC
±1
μ
A
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
,
f = 6MHz
5
10
mA
I
CC2
Supply Current (Standby)
E = V
CC
±0.2V,
RP = V
CC
±0.2V
35
100
μ
A
I
CC3
(1)
Supply Current (Program/
Erase)
Program/
Erase
Controller
active
V
PP
/WP =
V
IL
or V
IH
20
mA
V
PP
/WP =
V
PP
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+0.3
V
V
PP
Voltage for
V
PP
/WP
Program Acceleration
V
CC
= 3.0V ±10%
11.5
12.5
V
I
PP
Current for
V
PP
/WP
Program Acceleration
V
CC
= 3.0V ±10%
10
mA
V
OL
Output Low Voltage
I
OL
= 1.8mA
0.45
V
V
OH
Output High Voltage
I
OH
= –100
μ
A
V
CC
–0.4
V
V
ID
Identification Voltage
11.5
12.5
V
I
ID
Identification Current
A9 = V
ID
100
μ
A
V
LKO
Program/Erase Lockout
Supply Voltage
1.8
2.3
V
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