參數(shù)資料
型號(hào)： M29W320DT70ZA1
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
中文描述： 32兆位4Mb的x8或功能的2Mb x16插槽，啟動(dòng)塊3V電源快閃記憶體
文件頁(yè)數(shù)： 17/46頁(yè)
文件大?。?/td> 853K
代理商： M29W320DT70ZA1
17/46
M29W320DT, M29W320DB
The Program/Erase Controller will suspend within
the Erase Suspend Latency Time (refer to Table 5.
for value) of the Erase Suspend Command being
issued. Once the Program/Erase Controller has
stopped the memory will be set to Read mode and
the Erase will be suspended. If the Erase Suspend
command is issued during the period when the
memory is waiting for an additional block (before
the Program/Erase Controller starts) then the
Erase is suspended immediately and will start im-
mediately when the Erase Resume Command is
issued. It is not possible to select any further
blocks to erase after the Erase Resume.
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. If any attempt is made to
program in a protected block or in the suspended
block then the Program command is ignored and
the data remains unchanged. The Status Register
is not read and no error condition is given. Read-
ing from blocks that are being erased will output
the Status Register.
It is also possible to issue the Auto Select, Read
CFI Query and Unlock Bypass commands during
an Erase Suspend. The Read/Reset command
must be issued to return the device to Read Array
mode before the Resume command will be ac-
cepted.
Erase Resume Command.
The Erase Resume
command must be used to restart the Program/
Erase Controller after an Erase Suspend. The de-
vice must be in Read Array mode before the Re-
sume command will be accepted. An erase can be
suspended and resumed more than once.
Block Protect and
Chip Unprotect Commands.
Each block can be separately protected against
accidental Program or Erase. The whole chip can
be unprotected to allow the data inside the blocks
to be changed.
Block Protect and Chip Unprotect operations are
described in APPENDIX C..
相關(guān)PDF資料
PDF描述
M29W320DB70ZE1 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB70ZE1E 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB70ZE1F 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DT70ZE6E 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB70ZE6E 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W320DT70ZA6 功能描述:閃存 4Mx8 or 2Mx16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320DT70ZA6T 功能描述:閃存 4Mx8 or 2Mx16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320DT70ZE6E 功能描述:閃存 32MB 3V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320DT70ZE6F 功能描述:閃存 32MB 3V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320DT7AN6F 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
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