參數(shù)資料
型號(hào)： M29W320DT90ZE6F
廠商： 意法半導(dǎo)體
英文描述： Low-Power Single Inverter Gate 5-SC70 -40 to 85
中文描述： 32兆位4Mb的x8或功能的2Mb x16插槽，啟動(dòng)塊3V電源快閃記憶體
文件頁數(shù)： 45/46頁
文件大?。?/td> 853K
代理商： M29W320DT90ZE6F
45/46
M29W320DT, M29W320DB
REVISION HISTORY
Table 28. Document Revision History
Date
Version
Revision Details
March-2001
-01
First Issue (Brief Data)
08-Jun-2001
-02
Document expanded to full Product Preview
22-Jun-2001
-03
Minor text corrections to Read/Reset and Read CFI commands and Status Register Error
and Toggle Bits.
27-Jul-2001
-04
Document type: from Product Preview to Preliminary Data
TFBGA connections and Block Addresses (x16) diagrams clarification
Write Protect and Block Unprotect clarification
CFI Primary Algorithm table, Block Protection change
05-Oct-2001
-05
Added Block Protection Appendix
“Write Protect/V
PP
” pin renamed to “V
PP
/Write Protect” to be consistent with abbreviation.
Changes to the V
PP
/WP pin description, Figure Figure 17. and Table 14.. I
PP
added to
Table 10. and I
CC3
clarified. Modified description of V
PP
/WP operation in Unlock Bypass
Command section. Added V
PP
/WP decoupling capacitor to Figure Figure 12..
Clarified Read/Reset operation during Erase Suspend.
07-Feb-2002
-06
TFBGA package changed from 48 ball to 63 ball
05-Apr-2002
-07
Description of Ready/Busy signal clarified (and Figure 16 modified)
Clarified allowable commands during block erase
Clarified the mode the device returns to in the CFI Read Query command section
19-Nov-2002
7.1
Erase Suspend Latency Time (typical and maximum) added to Program, Erase Times
and Program, Erase Endurance Cycles table.
Typical values added for Icc1 and Icc2 in DC characteristics table.
Logic Diagram and Data Toggle Flowchart corrected.
Revision numbering modified: a minor revision will be indicated by incrementing the digit
after the dot, and a major revision, by incrementing the digit before the dot (revision
version 07 equals 7.0). Document promoted to full datasheet.
26-May-2003
7.2
Data Retention added to Table 5., Program, Erase Times and Program, Erase Endurance
Cycles, and Typical after 100k W/E Cycles column removed. TSOP48 package
mechanical updated. Lead-free package options E and F added to Table 18., Ordering
Information Scheme.
16-Aug-2005
8.0
TFBGA48 package added throughout document.
相關(guān)PDF資料
PDF描述
M29W320DT90ZE6T 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DT70N6F 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DT90N6F 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB90N6F 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DT70N1 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W320EB70N1 制造商:Micron Technology Inc 功能描述:
M29W320EB70N6 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320EB70N6E 功能描述:閃存 4Mx8 or 2Mx16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320EB70N6E 制造商:Micron Technology Inc 功能描述:IC FLASH BOTTOM BLOCK 32MB 29W320
M29W320EB70N6F 功能描述:閃存 STD FLASH 32 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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