參數(shù)資料
型號: M29W320DT90ZE6T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
中文描述: 32兆位4Mb的x8或功能的2Mb x16插槽,啟動塊3V電源快閃記憶體
文件頁數(shù): 20/46頁
文件大?。?/td> 853K
代理商: M29W320DT90ZE6T
M29W320DT, M29W320DB
20/46
Table 5. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
CC
after 100,00 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and V
CC
.
STATUS REGISTER
Bus Read operations from any address always
read the Status Register during Program and
Erase operations. It is also read during Erase Sus-
pend when an address within a block being erased
is accessed.
The bits in the Status Register are summarized in
Table 6., Status Register Bits.
Data Polling Bit (DQ7).
The Data Polling Bit can
be used to identify whether the Program/Erase
Controller has successfully completed its opera-
tion or if it has responded to an Erase Suspend.
The Data Polling Bit is output on DQ7 when the
Status Register is read.
During Program operations the Data Polling Bit
outputs the complement of the bit being pro-
grammed to DQ7. After successful completion of
the Program operation the memory returns to
Read mode and Bus Read operations from the ad-
dress just programmed output DQ7, not its com-
plement.
During Erase operations the Data Polling Bit out-
puts ’0’, the complement of the erased state of
DQ7. After successful completion of the Erase op-
eration the memory returns to Read Mode.
In Erase Suspend mode the Data Polling Bit will
output a ’1’ during a Bus Read operation within a
block being erased. The Data Polling Bit will
change from a ’0’ to a ’1’ when the Program/Erase
Controller has suspended the Erase operation.
Figure Figure 9., Data Polling Flowchart, gives an
example of how to use the Data Polling Bit. A Valid
Address is the address being programmed or an
address within the block being erased.
Toggle Bit (DQ6).
The Toggle Bit can be used to
identify whether the Program/Erase Controller has
successfully completed its operation or if it has re-
sponded to an Erase Suspend. The Toggle Bit is
output on DQ6 when the Status Register is read.
During Program and Erase operations the Toggle
Bit changes from ’0’ to ’1’ to ’0’, etc., with succes-
sive Bus Read operations at any address. After
successful completion of the operation the memo-
ry returns to Read mode.
During Erase Suspend mode the Toggle Bit will
output when addressing a cell within a block being
erased. The Toggle Bit will stop toggling when the
Program/Erase Controller has suspended the
Erase operation.
If any attempt is made to erase a protected block,
the operation is aborted, no error is signalled and
DQ6 toggles for approximately 100μs. If any at-
tempt is made to program a protected block or a
suspended block, the operation is aborted, no er-
ror is signalled and DQ6 toggles for approximately
1μs.
Figure Figure 10., Data Toggle Flowchart, gives
an example of how to use the Data Toggle Bit.
Error Bit (DQ5).
The Error Bit can be used to
identify errors detected by the Program/Erase
Controller. The Error Bit is set to ’1’ when a Pro-
gram, Block Erase or Chip Erase operation fails to
write the correct data to the memory. If the Error
Bit is set a Read/Reset command must be issued
Parameter
Min
Typ
(1, 2)
Max
(2)
Unit
Chip Erase
40
200
(3)
s
Block Erase (64 KBytes)
0.8
6
(4)
s
Erase Suspend Latency Time
15
25
(4)
μs
Program (Byte or Word)
10
200
(3)
μs
Accelerated Program (Byte or Word)
8
150
(3)
μs
Chip Program (Byte by Byte)
40
200
(3)
s
Chip Program (Word by Word)
20
100
(3)
s
Program/Erase Cycles (per Block)
100,000
cycles
Data Retention
20
years
相關(guān)PDF資料
PDF描述
M29W320DT70N6F 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DT90N6F 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB90N6F 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DT70N1 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DT70N1E 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W320EB70N1 制造商:Micron Technology Inc 功能描述:
M29W320EB70N6 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320EB70N6E 功能描述:閃存 4Mx8 or 2Mx16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320EB70N6E 制造商:Micron Technology Inc 功能描述:IC FLASH BOTTOM BLOCK 32MB 29W320
M29W320EB70N6F 功能描述:閃存 STD FLASH 32 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel