參數(shù)資料
型號(hào)： M29W400BT70N1
廠商： 意法半導(dǎo)體
英文描述： 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
中文描述： 4兆位（512KB的x8或256Kb的x16插槽，引導(dǎo)塊）低電壓?jiǎn)坞娫撮W存
文件頁(yè)數(shù)： 9/22頁(yè)
文件大?。?/td> 146K
代理商： M29W400BT70N1
9/22
M29W400BT, M29W400BB
Erase Suspend Command.
The Erase Suspend
Command may be used to temporarily suspend a
Block Erase operation and return the memory to
Read mode. The command requires one Bus
Write operation.
The Program/Erase Controller will suspend within
15
μ
s of the Erase Suspend Command being is-
sued. Once the Program/Erase Controller has
stopped the memory willbe set to Read mode and
the Erasewill be suspended. If the Erase Suspend
command is issued during the period when the
memory is waiting for an additional block (before
the Program/Erase Controller starts) then the
Erase is suspended immediately and will start im-
mediately when the Erase Resume Command is
issued. It will not be possible to select any further
blocks for erasure after the Erase Resume.
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. Reading from blocks that
are being erased willoutput the Status Register. It
is also possible toenter theAuto Select mode: the
memory will behaveas in the Auto Selectmode on
all blocks until a Read/Reset command returns the
memory to Erase Suspend mode.
Erase Resume Command.
The Erase Resume
command must be used to restart the Program/
Erase Controller from Erase Suspend. An erase
can be suspended and resumed more than once.
Table 9. Program, Erase Times and Program, Erase Endurance Cycles
(T
A
= 0 to 70
°
C or –40 to 85
°
C)
Note: 1. T
A
= 25
°
C, V
CC
= 3.3V.
Parameter
Min
Typ
(1)
Typical after
100k W/E Cycles
(1)
Max
Unit
Chip Erase (All bits in the memory set to ‘0’)
2.5
2.5
sec
Chip Erase
6
6
35
sec
Block Erase (64 Kbytes)
0.8
0.8
6
sec
Program (Byte or Word)
10
10
200
μ
s
Chip Program (Byte by Byte)
5.5
5.5
30
sec
Chip Program (Word by Word)
2.8
2.8
15
sec
Program/Erase Cycles (per Block)
100,000
cycles
相關(guān)PDF資料
PDF描述
M29W400BT70N1T 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
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M29W400BT70N6T 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
M29W400BT70ZA1 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
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M29W400BT70N6 功能描述:閃存 512Kx8 or 256Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W400BT90M1 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W400BT90M1T 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W400BT90N1 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W400BT90N6 制造商:STMicroelectronics 功能描述:4M FLASH TOP BOOT
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