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參數(shù)資料
| 型號： | M29W400DB45N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 4兆位（512KB的x8或256Kb的x16插槽，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 2/22頁 |
| 文件大小： | 146K |
| 代理商： | M29W400DB45N1T |
M29W400BT, M29W400BB
2/22
Figure 2. TSOP Connections
DQ3
DQ10
DQ9
DQ1
DQ2
A6
A5
DQ0
G
VSS
W
A3
A2
A1
RB
NC
DQ6
DQ13
DQ5
A8
NC
A9
A17
A7
A10
DQ14
DQ12
DQ4
DQ15A–1
DQ7
VCC
DQ11
NC
NC
AI02935
M29W400BT
M29W400BB
12
13
1
24
25
36
37
48
DQ8
NC
A4
A12
A11
A13
A16
BYTE
VSS
A15
A14
E
A0
RP
Figure 3. SO Connections
G
DQ0
DQ8
DQ1
DQ9
A3
A2
A1
A0
E
VSS
A13
A14
A15
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
A12
DQ5
DQ12
DQ2
DQ10
DQ3
DQ11
VCC
DQ4
A9
A10
W
A8
RB
A17
A4
NC
RP
A7
A6
A5
AI02936
M29W400BT
M29W400BB
8
9
10
11
12
13
14
15
16
17
2
3
4
5
6
7
32
31
30
29
28
27
26
25
24
23
22
20
21
19
18
44
43
42
41
39
38
37
36
35
34
33
A11
40
1
Table 1. Signal Names
A0-A17
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
SUMMARY DESCRIPTION
The M29W400B is a 4 Mbit (512Kb x8 or 256Kb
x16) non-volatile memory that canbe read, erased
and reprogrammed. These operations canbe per-
formed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory defaults to its
Read mode where it can be read in the same way
as a ROM or EPROM. The M29W400B is fully
backward compatible with the M29W400.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
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PDF描述 |
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| M29W400DB45N6E | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
| M29W400DB45N6F | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
| M29W400DB45N6T | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
| M29W400DB45ZA1E | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
| M29W400DB45ZA1F | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W400DB45N6E | 功能描述:閃存 4 Mbit (3 V) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W400DB45ZE6E | 功能描述:閃存 4 MBIT 3V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W400DB45ZE6E_NUD | 制造商:Micron Technology Inc 功能描述: |
| M29W400DB45ZE6F | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel |
| M29W400DB55N1 | 功能描述:閃存 512Kx8 or 256Kx16 55 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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