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參數(shù)資料
| 型號： | M29W512B120K1T |
| 廠商： | 意法半導體 |
| 英文描述： | 512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory |
| 中文描述： | 512千位64Kb的× 8，大量低電壓單電源閃存 |
| 文件頁數(shù)： | 5/18頁 |
| 文件大小： | 139K |
| 代理商： | M29W512B120K1T |
5/18
M29W512B
Table 4. Commands
Note:
X Don’t Care, PA Program Address, PD Program Data.
All values in the table are in hexadecimal.
The Command Interface only uses address bits A0-A10 to verify the commands, the upper address bits are Don’t Care.
Read/Reset.
After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select.
After an Auto Select command, read Manufacturer ID or Device ID.
Program, Unlock Bypass Program, Chip Erase.
After these commands read the Status Register until the Program/Erase Controller com-
pletes and the memory returns to Read Mode.
Unlock Bypass.
After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset.
After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Command
L
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset
1
X
F0
3
555
AA
2AA
55
X
F0
Auto Select
3
555
AA
2AA
55
555
90
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. Failure to observe a valid sequence of Bus
Write operations will result in the memory return-
ing to Read mode. The long command sequences
are imposed to maximize data security.
The commands are summarized in Table 4, Com-
mands. Refer to Table 4 in conjunction with the
text descriptions below.
Read/Reset Command.
The Read/Reset com-
mand returns the memory to its Read mode where
it behaves like a ROM or EPROM. It also resets
the errors in the Status Register. Either one or
three Bus Write operations can be used to issue
the Read/Reset command.
If the Read/Reset command is issued during a
Chip Erase operation the memory will take about
10μs to abort the Chip Erase. During the abort pe-
riod no valid data can be read from the memory.
Issuing a Read/Reset command during a Chip
Erase operation will leave invalid data in the mem-
ory.
Auto Select Command.
The Auto Select com-
mand is used to read the Manufacturer Code and
the Device Code. Three consecutive Bus Write op-
erations are required to issue the Auto Select com-
mand. Once the Auto Select command is issued
the memory remains in Auto Select mode until an-
other command is issued.
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = V
IL
and A1 = V
IL
. The other address bits
may be set to either V
IL
or V
IH
. The Manufacturer
Code for STMicroelectronics is 20h.
The Device Code can be read using a Bus Read
operation with A0 = V
IH
and A1 = V
IL
. The other
address bits may be set to either V
IL
or V
IH
. The
Device Code for the M29W512B is 27h.
Program Command.
The Program command
can be used to program a value to one address in
the memory array at a time. The command re-
quires four Bus Write operations, the final write op-
eration latches the address and data in the internal
state machine and starts the Program/Erase Con-
troller.
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