參數(shù)資料
型號: M29W640DB90ZA6E
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
中文描述: 64兆位和8Mb x8或4Mb的x16插槽,啟動塊3V電源快閃記憶體
文件頁數(shù): 20/49頁
文件大?。?/td> 945K
代理商: M29W640DB90ZA6E
M29W640DT, M29W640DB
20/49
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC Characteristic tables that follow are de-
rived from tests performed under the Measure-
ment Conditions summarized in the relevant
tables. Designers should check that the operating
conditions in their circuit match the measurement
conditions when relying on the quoted parame-
ters.
Table 9. Operating and AC Measurement Conditions
Figure 7. AC Measurement I/O Waveform
Figure 8. AC Measurement Load Circuit
Table 10. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
M29W640D
Unit
Min
Max
V
CC
Supply Voltage
2.7
3.6
V
Ambient Operating Temperature
–40
85
°C
Load Capacitance (C
L
)
30
pF
Input Rise and Fall Times
10
ns
Input Pulse Voltages
0 to V
CC
V
Input and Output Timing Ref. Voltages
V
CC
/2
V
AI05557
VCC
0V
VCC/2
AI05558
CL
CL includes JIG capacitance
DEVICE
UNDER
TEST
25k
VCC
25k
VCC
0.1μF
VPP
0.1μF
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
相關(guān)PDF資料
PDF描述
M29W640DT90ZA1E 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DB90ZA1E 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DB70N1E 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DB70N1F 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
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參數(shù)描述
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