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參數(shù)資料
| 型號： | M29W640DT70N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 64兆位和8Mb x8或4Mb的x16插槽，啟動塊3V電源快閃記憶體 |
| 文件頁數(shù)： | 13/49頁 |
| 文件大?。?/td> | 945K |
| 代理商： | M29W640DT70N1T |
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M29W640DT, M29W640DB
Quadruple Byte Program command is available for
x8 operations, while the Double Word Program
command is available for x16 operations.
Quadruple Byte Program Command.
The Qua-
druple Byte Program command is used to write a
page of four adjacent Bytes in parallel. The four
bytes must differ only for addresses A0, DQ15A-1.
Five bus write cycles are necessary to issue the
Quadruple Byte Program command.
The first bus cycle sets up the Quadruple Byte
Program Command.
The second bus cycle latches the Address and
the Data of the first byte to be written.
The third bus cycle latches the Address and
the Data of the second byte to be written.
The fourth bus cycle latches the Address and
the Data of the third byte to be written.
The fifth bus cycle latches the Address and the
Data of the fourth byte to be written and starts
the Program/Erase Controller.
Double Word Program Command.
The Double Word Program command is used to
write a page of two adjacent words in parallel. The
two words must differ only for the address A0. Pro-
gramming should not be attempted when V
PP
is
not at V
PPH
.
■
■
■
■
■
Three bus write cycles are necessary to issue the
Double Word Program command.
The first bus cycle sets up the Double Word
Program Command.
The second bus cycle latches the Address and
the Data of the first word to be written.
The third bus cycle latches the Address and
the Data of the second word to be written and
starts the Program/Erase Controller.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs Bus
Read operations will continue to output the Status
Register. A Read/Reset command must be issued
to reset the error condition and return to Read
mode.
Note that the Fast Program commands cannot
change a bit set at ’0’ back to ’1’. One of the Erase
Commands must be used to set all the bits in a
block or in the whole memory from ’0’ to ’1’.
Typical Program times are given in
Table
6., Program, Erase Times and Program, Erase
Endurance Cycles
.
Unlock Bypass Command.
The Unlock Bypass command is used in conjunc-
tion with the Unlock Bypass Program command to
program the memory faster than with the standard
■
■
■
program commands. When the cycle time to the
device is long, considerable time saving can be
made by using these commands. Three Bus Write
operations are required to issue the Unlock By-
pass command.
Once the Unlock Bypass command has been is-
sued the memory will only accept the Unlock By-
pass Program command and the Unlock Bypass
Reset command. The memory can be read as if in
Read mode.
When V
PP
is applied to the V
PP
/Write Protect pin
the memory automatically enters the Unlock By-
pass mode and the Unlock Bypass Program com-
mand can be issued immediately.
Unlock Bypass Program Command.
The Unlock Bypass command is used in conjunc-
tion with the Unlock Bypass Program command to
program the memory. When the cycle time to the
device is long, considerable time saving can be
made by using these commands. Three Bus Write
operations are required to issue the Unlock By-
pass command.
Once the Unlock Bypass command has been is-
sued the memory will only accept the Unlock By-
pass Program command and the Unlock Bypass
Reset command. The memory can be read as if in
Read mode.
The memory offers accelerated program opera-
tions through the V
PP
/Write Protect pin. When the
system asserts V
PP
on the V
PP
/Write Protect pin,
the memory automatically enters the Unlock By-
pass mode. The system may then write the two-
cycle Unlock Bypass program command se-
quence. The memory uses the higher voltage on
the V
PP
/Write Protect pin, to accelerate the Unlock
Bypass Program operation.
Never raise V
PP
/Write Protect to V
PP
from any
mode except Read mode, otherwise the memory
may be left in an indeterminate state.
Unlock Bypass Reset Command.
The Unlock Bypass Reset command can be used
to return to Read/Reset mode from Unlock Bypass
Mode. Two Bus Write operations are required to
issue the Unlock Bypass Reset command. Read/
Reset command does not exit from Unlock Bypass
Mode.
Chip Erase Command.
The Chip Erase command can be used to erase
the entire chip. Six Bus Write operations are re-
quired to issue the Chip Erase Command and start
the Program/Erase Controller.
If any blocks are protected then these are ignored
and all the other blocks are erased. If all of the
blocks are protected the Chip Erase operation ap-
pears to start but will terminate within about 100μs,
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W640DT70N6E | Low-Power Single Inverter Buffer/Driver with Open-Drain Outputs 5-SC70 -40 to 85 |
| M29W640DT70N6T | Low-Power Single Inverter Buffer/Driver with Open-Drain Outputs 5-SC70 -40 to 85 |
| M29W640DT70ZA1E | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
| M29W640DT70ZA1F | Low-Power Single Inverter Buffer/Driver with Open-Drain Outputs 5-SOT -40 to 85 |
| M29W640DT70ZA1T | 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W640DT90N6 | 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640DT90N6E | 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640DT90ZA6 | 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640FB70N6E | 功能描述:閃存 64 Mbit Boot Block 3V STD 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W640FB70N6F | 功能描述:閃存 64MB RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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