參數(shù)資料
型號: M29W640DT
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
中文描述: 64兆位和8Mb x8或4Mb的x16插槽,啟動(dòng)塊3V電源快閃記憶體
文件頁數(shù): 1/49頁
文件大?。?/td> 945K
代理商: M29W640DT
1/49
December 2004
M29W640DT
M29W640DB
64 Mbit (8Mb x8 or 4Mb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
V
CC
=
2.7V to 3.6V for Program, Erase,
Read
V
PP
=12 V for Fast Program (optional)
ACCESS TIME: 90 ns
PROGRAMMING TIME
10 μs per Byte/Word typical
Double Word Programming Option
135 MEMORY BLOCKS
1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom Location)
127 Main Blocks, 64 KBytes each
PROGRAM/ERASE CONTROLLER
Embedded Byte/Word Program
algorithms
ERASE SUSPEND and RESUME MODES
Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
V
PP
/WP Pin for FAST PROGRAM and WRITE
PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
64-bit Security Code
EXTENDED MEMORY BLOCK
Extra block used as security block or to
store additional information
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code M29W640DT: 22DEh
Bottom Device Code M29W640DB:
22DFh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
TFBGA63 (ZA)
63 ball array
FBGA
相關(guān)PDF資料
PDF描述
M29W640DT70N1E Low-Power Single Inverter Buffer/Driver with Open-Drain Outputs 5-SC70 -40 to 85
M29W640DT70N1F Low-Power Single Inverter Buffer/Driver with Open-Drain Outputs 5-SC70 -40 to 85
M29W640DT70N1T 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DT70N6E Low-Power Single Inverter Buffer/Driver with Open-Drain Outputs 5-SC70 -40 to 85
M29W640DT70N6T Low-Power Single Inverter Buffer/Driver with Open-Drain Outputs 5-SC70 -40 to 85
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