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參數(shù)資料
| 型號： | M29W641DU12N6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，統(tǒng)一座3V電源快閃記憶體 |
| 文件頁數(shù)： | 41/42頁 |
| 文件大?。?/td> | 641K |
| 代理商： | M29W641DU12N6E |
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M29W641DH, M29W641DL, M29W641DU
REVISION HISTORY
Table 26. Document Revision History
Date
Version
Revision Details
30-Apr-2002
-01
Document released
05-Sep-2002
1.1
When in Extended Block mode, the block at the boot block address can be used as OTP.
Data Toggle Flow chart corrected. Double Word Program Time (typ) changed to 20s.
Revision numbering modified: a minor revision will be indicated by incrementing the digit
after the dot, and a major revision, by incrementing the digit before the dot (revision
version 01 equals 1.0).
8-Apr-2003
2.0
New Part Numbers added. 100ns and 120ns Speed Classes added. TFBGA63 package
added. V
IO
removed from and V
CCQ
added to Table 6, Absolute Maximum Ratings. V
CCQ
added to Table 7, Operating and AC Measurement Conditions. Ready/Busy pin
(TFBGA63 package) added to the signals (concerns M29W641DU only).
Figure 7, AC Measurement I/O Waveform, and Figure 8, AC Measurement Load Circuit,
modified. Unlock Bypass Commands clarified and V
CCQ
description specified in SIGNAL
DESCRIPTIONS section. Test Conditions modified for I
LI
, I
LO
, V
IL
, V
IH
, V
OL
and V
OH
parameters in Table 9, DC Characteristics, and V
IL
, V
IH
, V
OL
and V
OH
parameters
corrected. t
WLWH
, t
DVWH
, t
WLAX
, t
WHRL
parameters modified for 90ns speed class in Table
11, Write AC Characteristics, Write Enable Controlled. t
ELEH
, t
DVEH
, t
ELAX
and t
EHRL
parameters modified for 90ns speed class in Table 12, Write AC Characteristics, Chip
Enable Controlled. t
PLYH
parameter added to Table 13, Reset/Block Temporary Unprotect
AC Characteristics.
Data and Value modified for address 2Dh, and Data modified for address 30h in Table 21,
Device Geometry Definition. Description modified at address offset 4Eh in Table 22.
Data Retention and Erase Suspend Latency Time parameters added to Table 6, Program,
Erase Times and Program, Erase Endurance Cycles, and Typical after 100k W/E Cycles
column removed. I
ID
(Identification) current removed from Table 9, DC Characteristics.
Lead-free package options E and F added to Table 16, Ordering Information Scheme.
Appendix C, EXTENDED MEMORY BLOCK, added. V
SS
pin connection to ground
clarified. Auto Select Command is used to read the Extended Memory Block. Note added
to Table 16, Ordering Information Scheme.
相關(guān)PDF資料 |
PDF描述 |
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| M29W641DH12N6F | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| M29W641DL12N6F | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| M29W641DU12N6F | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| M29W641DH70N1E | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| M29W641DH70N1F | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W641DU90ZA6 | 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB100M1 | 功能描述:閃存 SO-44 1MX8 512KX16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB100N1 | 功能描述:閃存 1Mx8 or 512Kx16 100n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB100N6 | 功能描述:閃存 1Mx8 or 512Kx16 100n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB120M1 | 功能描述:閃存 1Mx8 or 512Kx16 120n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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