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參數(shù)資料
| 型號(hào)： | M29W641DU70ZA6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，統(tǒng)一座3V電源快閃記憶體 |
| 文件頁數(shù)： | 5/42頁 |
| 文件大?。?/td> | 641K |
| 代理商： | M29W641DU70ZA6E |
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M29W641DH, M29W641DL, M29W641DU
SUMMARY DESCRIPTION
The M29W641D is a 64 Mbit (4Mb x16) non-vola-
tile memory that can be read, erased and repro-
grammed. These operations can be performed
using a single, low voltage, 2.7V to 3.6V V
CC
sup-
ply for the circuitry and a 1.8V to 3.6V V
CCQ
supply
for the Input/Output pins. An optional 12 V V
PP
power supply is provided to speed up customer
programming.
On power-up the memory defaults to its Read
mode where it can be read in the same way as a
ROM or EPROM.
The highest address block of the M29W641DH or
the lowest address block of the M29W641DL can
be protected from accidental programming or era-
sure using the WP pin (if WP = V
IL
). The
M29W641DU does not feature the WP pin.
Each block can be erased independently so it is
possible to preserve valid data while old data is
erased. The blocks can be protected to prevent
accidental Program or Erase commands from
modifying the memory. Program and Erase com-
mands are written to the Command Interface of
the memory. An on-chip Program/Erase Controller
simplifies the process of programming or erasing
the memory by taking care of all of the special op-
erations that are required to update the memory
contents. The end of a program or erase operation
can be detected and any error conditions identi-
fied. The command set required to control the
memory is consistent with JEDEC standards.
The M29W641D has an extra block, the Extended
Block, (of 32 KWords) that can be accessed using
a dedicated command. The Extended Block can
be protected and so is useful for storing security
information. However the protection is not revers-
ible, once protected the protection cannot be un-
done.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in a 48-pin TSOP package
(M29W641DL and M29W641DH) or in a 63-ball TF-
BGA package (M29W641DU). All devices are deliv-
ered with all the bits erased (set to 1).
Figure 2. Logic Diagram
Table 1. Signal Names
A0-A21
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-
DQ15
Data Inputs/Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
(M29W641DH and M29W641DL only)
RB
Ready/Busy Output (M29W641DU
only)
WP
Write Protect
V
CC
Supply Voltage
V
CCQ
Supply Voltage for Input/Output
V
PP
Supply Voltage for Fast Program
(optional)
V
SS
Ground
AI06697b
22
A0-A21
W
DQ0-DQ15
VCC
M29W641D
E
VSS
16
G
RP
VPP
WP
VCCQ
RB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W641DH90ZA6E | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| M29W641DH12ZA1E | Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes |
| M29W641DL12ZA1E | Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes |
| M29W641DU12ZA1E | Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes |
| M29W641DH12ZA1F | Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W641DU90ZA6 | 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB100M1 | 功能描述:閃存 SO-44 1MX8 512KX16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB100N1 | 功能描述:閃存 1Mx8 or 512Kx16 100n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB100N6 | 功能描述:閃存 1Mx8 or 512Kx16 100n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB120M1 | 功能描述:閃存 1Mx8 or 512Kx16 120n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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