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參數(shù)資料
| 型號： | M29W800AB100ZA1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 8兆1兆x8或512KB的x16插槽，引導(dǎo)塊低壓單電源閃存 |
| 文件頁數(shù)： | 10/33頁 |
| 文件大?。?/td> | 234K |
| 代理商： | M29W800AB100ZA1T |
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M29W800AT, M29W800AB
10/33
Table 9. Instructions
(1)
Note: 1. Commands not interpreted in this table will default to read array mode.
2. A wait of t
PLYH
is necessary after a Read/Reset command if the memory was in an Erase or Program mode before starting anynew
operation (see Tables 15, 16 and Figure 11).
3. X = Don’t Care.
4. The first cycles of the RD or AS instructions are followed by read operations. Any number of read cycles can occur after the com-
mand cycles.
5. Signature Address bits A0, A1, at V
IL
will output Manufacturer code (20h). Address bits A0 at V
IH
and A1, at V
IL
willoutput Device
code.
6. Block Protection Address: A0, at V
IL
, A1 at V
IH
and A15-A18 within the Block will output the Block Protection status.
7. For Coded cycles address inputs A11-A18 are don’t care.
8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last write entry, timeout statuscan be
verified through DQ3 value (see Erase Timer Bit DQ3 description). When full command is entered, read Data Polling or Toggle bit
until Erase is completed or suspended.
9. Read Data Polling, Toggle bits or RB until Erase completes.
10. During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased.
Mne.
Instr.
Cyc.
1st Cyc.
2nd Cyc.
3rd Cyc.
4th Cyc.
5th Cyc.
6th Cyc.
7th Cyc.
RD
(2,4)
Read/Reset
Memory Array
1+
Addr.
(3,7)
X
Read Memory Array until a new write cycle is initiated.
Data
F0h
3+
Addr.
(3,7)
Byte
AAAh
555h
AAAh
Read Memory Arrayuntil a new write cycle is
initiated.
Word
555h
2AAh
555h
Data
AAh
55h
F0h
AS
(4)
Auto Select
3+
Addr.
(3,7)
Byte
AAAh
555h
AAAh
Read Electronic Signature or Block Protection
Status until a new write cycle is initiated. See Note
5 and 6.
Word
555h
2AAh
555h
Data
AAh
55h
90h
PG
Program
4
Addr.
(3,7)
Byte
AAAh
555h
AAAh
Program
Address
Read Data Polling or ToggleBit until
Program completes.
Word
555h
2AAh
555h
Data
AAh
55h
A0h
Program
Data
BE
Block Erase
6
Addr.
(3,7)
Byte
AAAh
555h
AAAh
AAAh
555h
Block
Address
Additional
Block
(8)
Word
555h
2AAh
555h
555h
2AAh
Data
AAh
55h
80h
AAh
55h
30h
30h
CE
Chip Erase
6
Addr.
(3,7)
Byte
AAAh
555h
AAAh
AAAh
555h
AAAh
Note 9
Word
555h
2AAh
555h
555h
2AAh
555h
Data
AAh
55h
80h
AAh
55h
10h
ES
(10)
Erase
Suspend
1
Addr.
(3,7)
X
Read until Togglestops, then read all the data needed from any Block(s)
not being erased then Resume Erase.
Data
B0h
ER
Erase
Resume
1
Addr.
(3,7)
X
Read Data Polling or Toggle Bits until Erase completes or Erase is
suspended another time.
Data
30h
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相關(guān)代理商/技術(shù)參數(shù) |
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| M29W800AB120M1 | 功能描述:閃存 1Mx8 or 512Kx16 120n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB120N1 | 功能描述:閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB-120N1 | 制造商:STMicroelectronics 功能描述: |
| M29W800AB120N6 | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 120NS 48TSOP - Trays |
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