參數(shù)資料
型號: M29W800DB90M1T
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
中文描述: 8兆(1兆x8或512KB的x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁數(shù): 20/41頁
文件大小: 219K
代理商: M29W800DB90M1T
M29W800DT, M29W800DB
20/41
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 9, Operating and
AC Measurement Conditions. Designers should
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Table 9. Operating and AC Measurement Conditions
Figure 10. AC Measurement I/O Waveform
Figure 11. AC Measurement Load Circuit
Table 10. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
M29W800D
Unit
70
90
Min
Max
Min
Max
V
CC
Supply Voltage
2.7
3.6
2.7
3.6
V
Ambient Operating Temperature (range 6)
–40
85
–40
85
°C
Ambient Operating Temperature (range 1)
0
70
0
70
Load Capacitance (C
L
)
30
100
pF
Input Rise and Fall Times
10
10
ns
Input Pulse Voltages
0 to V
CC
0 to V
CC
V
Input and Output Timing Ref. Voltages
V
CC
/2
V
CC
/2
V
AI04498
VCC
0V
VCC/2
AI04499
CL
CL includes JIG capacitance
DEVICE
UNDER
TEST
25k
VCC
25k
VCC
0.1μF
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
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