參數(shù)資料
型號: M29W800DB
廠商: 意法半導(dǎo)體
英文描述: IC 16-BIT BUFFER/DRIVER 48-TSSOP
中文描述: 8兆(1兆x8或512KB的x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁數(shù): 16/41頁
文件大?。?/td> 219K
代理商: M29W800DB
M29W800DT, M29W800DB
16/41
Table 5. Commands, 8-bit mode, BYTE = V
IL
Note:
X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V
IL
or DQ15 when BYTE is V
IH
.
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. T
A
= 25°C, V
CC
= 3.3V.
Command
L
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset
1
X
F0
3
AAA
AA
555
55
X
F0
Auto Select
3
AAA
AA
555
55
AAA
90
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Block Erase
6+
AAA
AA
555
55
AAA
80
AAA
AA
555
55
BA
30
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Read CFI Query
1
AA
98
Parameter
Min
Typ
(1)
Typical after
100k W/E Cycles
(1)
Max
Unit
Chip Erase
12
15
60
s
Block Erase (64 Kbytes)
0.8
6
s
Program (Byte or Word)
10
200
μs
Chip Program (Byte by Byte)
12
60
s
Chip Program (Word by Word)
6
30
s
Program/Erase Cycles (per Block)
100,000
cycles
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