參數(shù)資料
型號: M29W800DT90ZA6T
廠商: 意法半導體
英文描述: Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
中文描述: 8兆(1兆x8或512KB的x16插槽,引導塊)3V電源快閃記憶體
文件頁數(shù): 14/41頁
文件大?。?/td> 219K
代理商: M29W800DT90ZA6T
M29W800DT, M29W800DB
14/41
Erase Suspend Command.
The Erase Suspend
Command may be used to temporarily suspend a
Block Erase operation and return the memory to
Read mode. The command requires one Bus
Write operation.
The Program/Erase Controller will suspend within
15μs of the Erase Suspend Command being is-
sued. Once the Program/Erase Controller has
stopped the memory will be set to Read mode and
the Erase will be suspended. If the Erase Suspend
command is issued during the period when the
memory is waiting for an additional block (before
the Program/Erase Controller starts) then the
Erase is suspended immediately and will start im-
mediately when the Erase Resume Command is
issued. It is not possible to select any further
blocks to erase after the Erase Resume.
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. If any attempt is made to
program in a protected block or in the suspended
block then the Program command is ignored and
the data remains unchanged. The Status Register
is not read and no error condition is given. Read-
ing from blocks that are being erased will output
the Status Register.
It is also possible to issue the Auto Select, Read
CFI Query and Unlock Bypass commands during
an Erase Suspend. The Read/Reset command
must be issued to return the device to Read Array
mode before the Resume command will be ac-
cepted.
Erase Resume Command.
The Erase Resume
command must be used to restart the Program/
Erase Controller from Erase Suspend. An erase
can be suspended and resumed more than once.
Read CFI Query Command.
The
Query Command is used to read data from the
Common Flash Interface (CFI) Memory Area. This
command is valid when the device is in the Read
Array mode, or when the device is in Autoselected
mode.
One Bus Write cycle is required to issue the Read
CFI Query Command. Once the command is is-
sued subsequent Bus Read operations read from
the Common Flash Interface Memory Area.
The Read/Reset command must be issued to re-
turn the device to the previous mode (the Read Ar-
ray mode or Autoselected mode). A second Read/
Reset command would be needed if the device is
to be put in the Read Array mode from Autoselect-
ed mode.
See Appendix B, Tables 20, 21, 22, 23, 24 and for
details on the information contained in the Com-
mon Flash Interface (CFI) memory area.
Block Protect and
Chip Unprotect Commands.
Each block can be separately protected against
accidental Program or Erase. The whole chip can
be unprotected to allow the data inside the blocks
to be changed.
Block Protect and Chip Unprotect operations are
described in Appendix C.
Read
CFI
相關PDF資料
PDF描述
M29W800DB90M1T 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
M29W800DB90M6T 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
M29W800T100M1R Low-Power Configurable Multiple-Function Gate 6-SOT -40 to 85
M2GB51TB-1 ULTRA HIGH BRIGHTNESS GREEN LED LAMP
M3000-86-1 Single output 3000 and 4000 Watt AC/DC high current power supplies with PFC
相關代理商/技術參數(shù)
參數(shù)描述
M29W800FB70N3E 制造商:Micron Technology Inc 功能描述: 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TSOP
M29W800FB70N3F 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TSOP
M29W800FB70ZA3SE 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TFBGA
M29W800FB70ZA3SF 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel
M29W800FB70ZA3SF TR 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TFBGA