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參數(shù)資料
| 型號(hào)： | M2V56S20ATP-5 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 256M Synchronous DRAM |
| 中文描述： | 256M同步DRAM |
| 文件頁數(shù)： | 24/49頁 |
| 文件大小： | 244K |
| 代理商： | M2V56S20ATP-5 |
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Feb.2000
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.1)
Single Data Rate
M2V56S20/ 30/ 40/ TP -6, -7, -8
256M Synchronous DRAM
24
[ Read with Auto-Precharge Interrupted by Read to another Bank ]
Burst read with auto-precharge can be interrupted by read to
another
bank. Next ACT comand can
be issued after (BL+tRP) from the READA. Auto-precharge interruption by a command to the same
bank is inhibited.
READA interrupted by READ to another bank (CL=2, BL=4)
CLK
Command
A0-9,11-12
A10
BA0-1
DQ
Read
Ya
1
00
Qa0
Qa1
Read
Yb
0
10
BL
tRP
ACT
Xa
Xa
00
interrupted
auto-precharge
activate
Qb0
Qb1
Qb2
Qb3
Full Page Burst
Full page burst length is available for only the sequential burst type. Full page burst read / write is
repeated untill a Precharge or a Burst Terminate command is issued. In case of the full page burst,
a read / write with auto-precharge command is illegal.
Single Write
When sigle write mode is set, burst length for write is always one, independently of Burst Length
defined by (A2-0).
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| M2V56S20ATP-6 | 256M Synchronous DRAM |
| M2V56S20ATP-7 | 256M Synchronous DRAM |
| M2V56S20TP | 256M Synchronous DRAM |
| M2V56S20TP-8 | 256M Synchronous DRAM |
| M2V56S30ATP-6 | 256M Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2V56S20ATP-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM |
| M2V56S20ATP-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM |
| M2V56S20ATP-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM |
| M2V56S20TP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM |
| M2V56S20TP-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM |
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