參數(shù)資料
型號: M30304GDPGP
元件分類: 微控制器/微處理器
英文描述: 16-BIT, OTPROM, 16 MHz, MICROCONTROLLER, PQFP100
封裝: 14 X 14 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, LQFP-100
文件頁數(shù): 19/57頁
文件大小: 649K
代理商: M30304GDPGP
5. Electrical Characteristics
Page 26 of 53
NOTES:
1.
Referenced to VCC1=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60
°C (U3, U5) unless otherwise specified.
2.
Program and Erase Endurance refers to the number of times a block erase can be performed.
If the program and erase endurance is 100, each block can be erased 100 times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.
(Rewrite prohibited)
3.
Maximum number of E/W cycles for which operation is guaranteed.
4.
Topr = -40 to 85
°C (U3) / -20 to 85 °C (U5).
Table 5.4
Flash Memory Version Electrical Characteristics (1)
Symbol
Parameter
Standard
Unit
Min.
Typ.
Max.
Program and Erase Endurance (2)
100(3)
cycle
Word Program Time (VCC1=5.0V
)
25
200
μs
Lock Bit Program Time
25
200
μs
Block Erase Time
(VCC1=5.0V
)
4-Kbyte block
0.3
4
s
8-Kbyte block
0.3
4
s
32-Kbyte block
0.5
4
s
64-Kbyte block
0.8
4
s
tPS
Flash Memory Circuit Stabilization Wait Time
15
μs
Data Hold Time (4)
10
year
Table 5.5
Flash Memory Version Program / Erase Voltage and Read Operation Voltage
Characteristics
Flash Program, Erase Voltage
Flash Read Operation Voltage
VCC1 = 3.3 ± 0.3 V or 5.0 ± 0.5 (Topr = 0°C to 60°C )
VCC1=2.7 to 5.5 V (Topr = -40°C to 85°C (U3)
-20
°C to 85°C (U5))
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