參數(shù)資料
型號(hào)： M30624FGMGP
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 10 MHz, MICROCONTROLLER, PQFP100
封裝： 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100
文件頁數(shù)： 5/33頁
文件大小： 448K
代理商： M30624FGMGP
Electrical characteristics
Mitsubishi microcomputers
M16C / 62M Group
(Low voltage version)
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
10
Table 1.26.3. Electrical characteristics (referenced to VCC = 2.7V to 3.6V, VSS = 0V at Topr = – 20oC to
85oC / – 40oC to 85oC (Note 1), f(XIN) = 10MHZ without wait unless otherwise specified)
V
XOUT
2.5
V
0.5
V
XOUT
0.5
2.5
IOH=–1mA
IOH=–0.1mA
IOH=–50A
IOL=1mA
IOL=0.1mA
IOL=50A
P00 to P07, P10 to P17, P20 to P27, P30 to P37,
P40 to P47, P50 to P57, P60 to P67, P72 to P77,
P40 to P47, P50 to P57, P60 to P67, P70 to P77,
P80 to P84, P86,P87, P90 to P97, P100 to P107
HIGHPOWER
LOWPOWER
HIGHPOWER
LOWPOWER
P80 to P84, P86,P87, P90 to P97, P100 to P107
HIGHPOWER
LOWPOWER
XCOUT
3.0
1.6
V
0.2
0.8V
0.2
1.8V
P00 to P07, P10 to P17, P20 to P27, P30 to P37,
P40 to P47, P50 to P57, P60 to P67, P70 to P77,
P80 to P87, P90 to P97, P100 to P107,
4.0A
A
When clock is stopped
2.0
V
RESET
XIN, RESET, CNVss, BYTE
VI=3V
VI=0V
–4.0
P00 to P07, P10 to P17, P20 to P27, P30 to P37,
P40 to P47, P50 to P57, P60 to P67, P70 to P77,
P80 to P87, P90 to P97, P100 to P107,
XIN, RESET, CNVss, BYTE
XIN
XCIN
10.0
3.0
M
M
Square wave,
no division
f(XIN)=10MHz
mA
9.521.25
Mask ROM version
75
k
P00 to P07, P10 to P17, P20 to P27, P30 to P37,
P40 to P47, P50 to P57, P60 to P67, P72 to P77,
P80 to P84, P86,P87, P90 to P97, P100 to P107
V
XCOUT
0
HIGHPOWER
LOWPOWER
VI=0V
20
330
When clock is stopped
Topr=25
°C
1.0
A
Topr=85
°C
20.0
When clock is stopped
f(XCIN)=32kHz
When a WAIT instruction
is executed.
Oscillation capacity High
(Note 2)
2.8A
0.9A
f(XCIN)=32kHz
When a WAIT instruction
is executed.
Oscillation capacity Low
(Note 2)
Square wave,
no division
f(XIN)=10MHz
mA
12.021.25
Flash memory
3V version
Square wave
f(XCIN)=32kHz
45.0
A
Mask ROM version,
flash memory
3V version
SDA, CLK0 to CLK4, TA2OUT to TA4OUT,
HOLD, RDY, TA0IN to TA4IN, TB0IN to TB5IN,
INT0 to INT5, NMI, ADTRG, CTS0 to CTS2, SCL,
KI0 to KI3, RxD0 to RxD2, SIN3, SIN4
Mask ROM version,
flash memory
3V version
Flash memory
3V version
program
F
lash memory
3V version
erase
Square wave,
division by 2
f(XIN)=10MHz
Square wave,
division by 2
f(XIN)=10MHz
14.0
17.0
mA
Symbol
VOH
HIGH output
voltage
VOH
VOL
LOW output
voltage
LOW output
voltage
VOL
HIGH output
voltage
Standard
Typ.
Unit
Measuring condition
Min
Max.
Parameter
HIGH output
voltage
With no load applied
Hysteresis
HIGH input
current
IIH
LOW input
current
IIL
VRAM
RAM retention voltage
ICC
Power supply current
VT+–VT–
RfXIN
RfXCIN
Feedback resistance
RPULLUP
LOW output
voltage
With no load applied
In single-chip mode, the output pins
are open and other pins are VSS
Pull-up
resistance
Note 1: Specify a product of -40
°C to 85°C to use it.
Note 2: With one timer operated using fC32.
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