
Electrical characteristics
Mitsubishi microcomputers
M16C / 62N Group (80-pin)
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
152
Table 1.20.3. Electrical characteristics (referenced to VCC = 3.0V to 3.6V, VSS = 0V at Topr = – 20oC to
85oC / – 40oC to 85oC (Note 1), f(XIN) = 16MHZ unless otherwise specified)
VOH
VOL
V
XOUT
2.8
V
0.5
V
XOUT
0.5
2.8
IOH=–1mA, VCC=3.3V
IOH=–0.1mA, VCC=3.3V
IOH=–50
A, VCC=3.3V
IOL=1mA, VCC=3.3V
IOL=0.1mA, VCC=3.3V
IOL=50
A, VCC=3.3V
P00 to P07, P20 to P27, P30 to P37,
P40 to P43, P50 to P57, P60 to P67,
P76, P77, P80 to P84, P86, P87,
HIGHPOWER
LOWPOWER
P90, P92 to P97, P100 to P107
HIGHPOWER
LOWPOWER
P70, P71, P76, P77, P80 to P84, P86,
P87, P90, P92 to P97, P100 to P107
HIGHPOWER
LOWPOWER
XCOUT
With no load applied, VCC=3.3V
2.8
1.6
V
SymbolParameter
Standard
Typ.
Max.
Unit
Min.
Measuring condition
HIGH output
voltage
HIGH output
voltage
HIGH output
voltage
LOW output
voltage
LOW output
voltage
IIH
I IL
VRAM
VT+-VT-
0.20.8V
0.21.8V
P00 to P07, P20 to P27, P30 to P37,
4.0
A
RESET
XIN, RESET, CNVss (BYTE)
TA0IN, TA3IN, TA4IN,
TB0IN, TB2IN to TB5IN, INT0 to INT2,
VI=3V, VCC=3.3V
VI=0V, VCC=3.3V
–4.0
P00 to P07, P20 to P27, P30 to P37,
XIN, RESET, CNVss (BYTE)
RfXIN
RfCXIN
XIN
XCIN
10.0
3.0M
M
P90, P92 to P97, P100 to P107,
P70, P71, P76, P77, P80 to P87,
P40 to P43, P50 to P57, P60 to P67,
P90, P92 to P97, P100 to P107,
P70, P71, P76, P77, P80 to P87,
P40 to P43, P50 to P57, P60 to P67,
CLK4, TA3OUT, TA4OUT, NMI, KI0 to KI3,
ADTRG,CTS0,CTS1 CLK0,CLK1,CLK3,
2.0
V
When clock is stopped
Hysteresis
HIGH input
current
LOW input
current
Feedback resistance
RAM retention voltage
The output pins
are open and
other pins are
VSS
SIN4, RXD0 to RXD2
Square wave
f(XCIN)=32kHz, VCC=3.3V
40.0
A
Square wave, no division
f(XIN)=16MHz
mA
12.5
25.0
Mask ROM
version
Square wave, no division
f(XIN)=16MHz
mA
20.0
32.0
Flash memory
version
Mask ROM
version
Square wave, in RAM (Note 3)
f(XCIN)=32kHz, VCC=3.3V
A
Flash memory
version
Square wave, in flash memory
f(XCIN)=32kHz, VCC=3.3V
225
A
Flash memory
version
45
P00 to P07, P20 to P27, P30 to P37,
P40 to P43, P50 to P57, P60 to P67,
P76, P77, P80 to P84, P86,P87,
P90, P92 to P97, P100 to P107
k
20.0
100.0 500.0
VI=0V, VCC=3.3V
RPULLUP
Pull-up
resistance
V
XCOUT
With no load applied, VCC=3.3V
HIGHPOWER
LOWPOWER
LOW output
voltage
0
VCC=3.3V
Icc
Power supply current
2.7
A
5.8
A
f(XCIN)=32kHz, VCC=3.3V
When a WAITinstruction
is executed.
Oscillation capacity High (Note2)
When a WAIT instruction
is executed.
Oscillation capacity Low (Note2)
Division by 2
f(XIN)=16MHz , VCC=3.3V
mA
Flash memory
version, program
Division by 2
f(XIN)=16MHz , VCC=3.3V
21.0
mA
Flash memory
version, erase
19.0
2.0
A
100
3.0
A
7.0
A
f(XCIN)=32kHz, VCC=3.3V
Topr=85
°C, VCC=3.3V
when clock is stopped
Topr=25
°C, VCC=3.3V
when clock is stopped
When a WAITinstruction
is executed.
Oscillation capacity High (Note2)
When a WAIT instruction
is executed.
Oscillation capacity Low (Note2)
0.1
0.4
Mask ROM
version
Flash memory
version
Mask ROM
version
Flash memory
version
Note 1: Specify a product of -40
°C to 85°C to use it.
Note 2: With one timer operated using fC32.
Note 3: Refer to the shifting to the low power dissipation mode flowchart (Figure 1.29.2b).