參數(shù)資料
型號: M3062CMAT-XXXFP
元件分類: 微控制器/微處理器
英文描述: 16-BIT, MROM, 24 MHz, MICROCONTROLLER, PQFP100
封裝: 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100
文件頁數(shù): 69/103頁
文件大小: 1106K
代理商: M3062CMAT-XXXFP
5. Electrical Characteristics
Rev.2.41
Jan 10, 2006
Page 66 of 96
REJ03B0001-0241
NOTES:
1.
Referenced to VCC1=VCC2=2.7 to 3.3V, VSS = 0V at Topr =
20 to 85°C / 40 to 85°C, f(BCLK)=10MHz unless otherwise
specified.
2.
With one timer operated using fC32.
3.
This indicates the memory in which the program to be executed exists.
4.
Idet is dissipation current when the following bit is set to “1” (detection circuit enabled).
Idet4: VC27 bit in the VCR2 register
Idet3: VC26 bit in the VCR2 register
Table 5.31
Electrical Characteristics (2) (1)
Symbol
Parameter
Measuring Condition
Standard
Unit
Min.
Typ.
Max.
ICC
Power Supply Current
(VCC1=VCC2=2.7V to 3.6V)
In single-chip
mode, the output
pins are open and
other pins are VSS
Mask ROM
f(BCLK)=10MHz
No division
811
mA
No division,
On-chip oscillation
1mA
Flash
Memory
f(BCLK)=10MHz,
No division
813
mA
No division,
On-chip oscillation
1.8
mA
Flash Memory
Program
f(BCLK)=10MHz,
VCC1=3.0V
12
mA
Flash Memory
Erase
f(BCLK)=10MHz,
VCC1=3.0V
22
mA
Mask ROM
f(XCIN)=32kHz
Low power dissipation
mode, ROM (3)
25
A
Flash Memory
f(BCLK)=32kHz
Low power dissipation
mode, RAM (3)
25
A
f(BCLK)=32kHz
Low power dissipation
mode, Flash Memory (3)
420
A
On-chip oscillation,
Wait mode
45
A
Mask ROM
Flash Memory
f(BCLK)=32kHz
Wait mode (2),
Oscillation capability High
6.0
A
f(BCLK)=32kHz
Wait mode (2),
Oscillation capability Low
1.8
A
Stop mode
Topr =25
°C
0.7
3.0
A
Idet4
Low Voltage Detection Dissipation Current (4)
0.6
4
A
Idet3
Reset Area Detection Dissipation Current (4)
0.4
2
A
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