參數(shù)資料
型號(hào): M306N4FGTFP
元件分類(lèi): 微控制器/微處理器
英文描述: 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100
封裝: 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100
文件頁(yè)數(shù): 59/92頁(yè)
文件大小: 694K
代理商: M306N4FGTFP
Rev.2.40
Aug 25, 2006
page 62 of 88
REJ03B0003-0240
M16C/6N Group (M16C/6N4)
5. Electric Characteristics (Normal-ver.)
Under development
This document is under development and its contents are subject to change.
td(BCLK-AD)
th(BCLK-AD)
th(RD-AD)
th(WR-AD)
td(BCLK-CS)
th(BCLK-CS)
td(BCLK-ALE)
th(BCLK-ALE)
td(BCLK-RD)
th(BCLK-RD)
td(BCLK-WR)
th(BCLK-WR)
td(BCLK-DB)
th(BCLK-DB)
td(DB-WR)
th(WR-DB)
td(BCLK-HLDA)
ns
Address output delay time
Address output hold time (in relation to BCLK)
Address output hold time (in relation to RD)
Address output hold time (in relation to WR)
Chip select output delay time
Chip select output hold time (in relation to BCLK)
ALE signal output delay time
ALE signal output hold time
RD signal output delay time
RD signal output hold time
WR signal output delay time
WR signal output hold time
Data output delay time (in relation to BCLK)
Data output hold time (in relation to BCLK)
(3)
Data output delay time (in relation to WR)
Data output hold time (in relation to WR)
(3)
__________
HLDA output delay time
Symbol
Parameter
Min.
Standard
Unit
Max.
4
0
(NOTE 1)
4
–4
0
4
(NOTE 2)
(NOTE 1)
Switching Characteristics
(Referenced to VCC = 5 V, VSS = 0 V, at Topr = –40 to 85 °C unless otherwise specified)
Table 5.48 Memory Expansion Mode and Microprocessor Mode (for setting with no wait)
25
15
25
40
NOTES:
1. Calculated according to the BCLK frequency as follows:
0.5
109
f(BCLK)
– 10 [ns]
2. Calculated according to the BCLK frequency as follows:
0.5
109
f(BCLK)
– 40 [ns]
3. This standard value shows the timing when the
output is off, and does not show hold time of
data bus.
Hold time of data bus varies with capacitor volume
and pull-up (pull-down) resistance value.
Hold time of data bus is expressed in
t = – CR
ln (1 – VOL / VCC)
by a circuit of the right figure.
For example, when VOL = 0.2 VCC, C = 30 pF,
R =1 k
, hold time of output “L” level is
t = – 30 pF
1 k ln (1 – 0.2 VCC / VCC) = 6.7 ns.
Figure 5.12 Port P0 to P10 Measurement Circuit
DBi
R
C
30 pF
P6
P7
P8
P10
P9
P0
P1
P2
P3
P4
P5
Measuring
Condition
Figure 5.12
f(BCLK) is 12.5 MHz or less.
VCC = 5 V
相關(guān)PDF資料
PDF描述
M306N4MCT-XXXFP 16-BIT, MROM, 20 MHz, MICROCONTROLLER, PQFP100
M306N4FCGP 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100
M306N4FGVFP 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100
M306N5FCVFP 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100
M306N5MCV-XXXFP 16-BIT, MROM, 20 MHz, MICROCONTROLLER, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M306N4FGTFP#Q9 制造商:Renesas Electronics Corporation 功能描述:
M306N4FGTFP#U0 功能描述:MCU 5V 256K T-TEMP PB-FREE 100-Q RoHS:是 類(lèi)別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:M16C™ M16C/60/6N4 標(biāo)準(zhǔn)包裝:250 系列:56F8xxx 核心處理器:56800E 芯體尺寸:16-位 速度:60MHz 連通性:CAN,SCI,SPI 外圍設(shè)備:POR,PWM,溫度傳感器,WDT 輸入/輸出數(shù):21 程序存儲(chǔ)器容量:40KB(20K x 16) 程序存儲(chǔ)器類(lèi)型:閃存 EEPROM 大小:- RAM 容量:6K x 16 電壓 - 電源 (Vcc/Vdd):2.25 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 6x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:48-LQFP 包裝:托盤(pán) 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323
M306N4FGTFP#UK 制造商:Renesas Electronics Corporation 功能描述:
M306N4FGTFP#UKJ 功能描述:IC M16C/6N4 MCU FLASH 100QFP RoHS:是 類(lèi)別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:M16C™ M16C/60/6N4 標(biāo)準(zhǔn)包裝:96 系列:PIC® 16F 核心處理器:PIC 芯體尺寸:8-位 速度:20MHz 連通性:I²C,SPI 外圍設(shè)備:欠壓檢測(cè)/復(fù)位,POR,PWM,WDT 輸入/輸出數(shù):11 程序存儲(chǔ)器容量:3.5KB(2K x 14) 程序存儲(chǔ)器類(lèi)型:閃存 EEPROM 大小:- RAM 容量:128 x 8 電壓 - 電源 (Vcc/Vdd):2.3 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:14-TSSOP(0.173",4.40mm 寬) 包裝:管件
M306N4FGTGP 制造商:Renesas Electronics Corporation 功能描述: