參數(shù)資料
型號(hào): M306N4FGVFP
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100
封裝: 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100
文件頁(yè)數(shù): 83/92頁(yè)
文件大?。?/td> 694K
代理商: M306N4FGVFP
Rev.2.40
Aug 25, 2006
page 84 of 88
REJ03B0003-0240
M16C/6N Group (M16C/6N4)
5. Electric Characteristics (Normal-ver.)
Under development
This document is under development and its contents are subject to change.
Figure 5.26 Timing Diagram (5)
Read timing
Write timing
BCLK
CSi
ALE
DBi
ADi
BHE
WR, WRL
WRH
Memory Expansion Mode and Microprocessor Mode
(For 2-wait setting and external area access)
BCLK
CSi
ALE
DBi
ADi
BHE
RD
tcyc
td(BCLK-CS)
30ns.max
td(BCLK-AD)
30ns.max
td(BCLK-ALE)
30ns.max
th(BCLK-ALE)
-4ns.min
td(BCLK-RD)
30ns.max
Hi-Z
tSU(DB-RD)
50ns.min
th(RD-DB)
0ns.min
th(BCLK-RD)
0ns.min
th(RD-AD)
0ns.min
th(BCLK-AD)
4ns.min
th(BCLK-CS)
4ns.min
tcyc
Hi-Z
td(BCLK-CS)
30ns.max
td(BCLK-AD)
30ns.max
td(BCLK-ALE)
30ns.max
th(BCLK-ALE)
-4ns.min
td(BCLK-WR)
30ns.max
th(BCLK-CS)
4ns.min
th(BCLK-AD)
4ns.min
th(WR-AD)
(0.5
tcyc-10)ns.min
th(BCLK-WR)
0ns.min
td(BCLK-DB)
40ns.max
td(DB-WR)
(1.5
tcyc-40)ns.min
th(BCLK-DB)
4ns.min
th(WR-DB)
(0.5
tcyc-10)ns.min
tac2(RD-DB)
(2.5
tcyc-60)ns.max
tcyc =
1
f(BCLK)
Measuring conditions :
VCC = 3.3 V
Input timing voltage
: VIL = 0.6 V, VIH = 2.7 V
Output timing voltage : VOL = 1.65 V, VOH = 1.65 V
VCC = 3.3 V
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