參數(shù)資料
型號: M306N4MCT-XXXGP
元件分類: 微控制器/微處理器
英文描述: 16-BIT, MROM, 20 MHz, MICROCONTROLLER, PQFP100
封裝: 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100
文件頁數(shù): 64/92頁
文件大?。?/td> 694K
代理商: M306N4MCT-XXXGP
Rev.2.40
Aug 25, 2006
page 67 of 88
REJ03B0003-0240
M16C/6N Group (M16C/6N4)
5. Electric Characteristics (Normal-ver.)
Under development
This document is under development and its contents are subject to change.
Figure 5.15 Timing Diagram (3)
BCLK
CSi
td(BCLK-CS)
25ns.max
ADi
25ns.max
ALE
25ns.max
-4ns.min
RD
25ns.max
th(BCLK-RD)
0ns.min
th(BCLK-AD)
4ns.min
th(BCLK-CS)
4ns.min
Hi-Z
DBi
th(RD-DB)
0ns.min
th(RD-AD)
BHE
tcyc
Read timing
td(BCLK-AD)
td(BCLK-ALE)
th(BCLK-ALE)
tSU(DB-RD)
td(BCLK-RD)
40ns.min
tac1(RD-DB)
Memory Expansion Mode and Microprocessor Mode
(For setting with no wait)
WR,WRL,
WRH
25ns.max
th(BCLK-WR)
0ns.min
BCLK
CSi
td(BCLK-CS)
25ns.max
ADi
td(BCLK-AD)
25ns.max
ALE
25ns.max
td(BCLK-ALE)
th(BCLK-ALE)
-4ns.min
th(BCLK-AD)
4ns.min
th(BCLK-CS)
4ns.min
tcyc
th(WR-AD)
BHE
td(BCLK-DB)
40ns.max
4ns.min
th(BCLK-DB)
td(DB-WR)
(0.5
tcyc-40)ns.min
th(WR-DB)
DBi
Write timing
td(BCLK-WR)
Hi-Z
(0.5
tcyc-45)ns.max
(0.5
tcyc-10)ns.min
tcyc =
1
f(BCLK)
Measuring conditions :
VCC = 5 V
Input timing voltage
: VIL = 0.8 V, VIH = 2.0 V
Output timing voltage : VOL = 0.4 V, VOH = 2.4 V
(0.5
tcyc-10)ns.min
VCC = 5 V
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