參數(shù)資料
型號(hào)： M306NMFJGP
元件分類(lèi)： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP128
封裝： 14 X 20 MM, 0.50 MM PITCH, PLASTIC, LQFP-128
文件頁(yè)數(shù)： 38/86頁(yè)
文件大?。?/td> 724K
代理商： M306NMFJGP
Rev.2.10
Aug 25, 2006
page 41 of 81
REJ03B0058-0210
M16C/6N Group (M16C/6NK, M16C/6NM)
5. Electric Characteristics (Normal-ver.)
Under development
This document is under development and its contents are subject to change.
2
150
ms
s
Time for internal power supply stabilization during powering-on
STOP release time
Low power dissipation mode wait mode release time
td(P-R)
td(R-S)
td(W-S)
Symbol
Parameter
Min.
Standard
Unit
Measuring
Condition
Max.
Typ.
VCC = 3.0 to 5.5 V
Table 5.10 Power Supply Circuit Timing Characteristics
CPU clock
VCC
td(P-R)
td(P-R)
Time for internal power supply
stabilization during powering-on
td(R-S)
STOP release time
td(W-S)
Low power dissipation mode
wait mode release time
CPU clock
td(W-S)
td(R-S)
(b)
(a)
Interrupt for
(a) Stop mode release
or
(b) Wait mode release
Figure 5.1 Power Supply Circuit Timing Diagram
VCC = 3.3 ± 0.3 V or 5.0 ± 0.5 V
Flash Read Operation Voltage
Flash Program, Erase Voltage
VCC = 3.0 to 5.5 V
Table 5.8 Flash Memory Version Electrical Characteristics
(1)
NOTES:
1. Referenced to VCC = 4.5 to 5.5 V, 3.0 to 3.6 V, Topr = 0 to 60°C unless otherwise specified.
2. Programming and erasure endurance refers to the number of times a block erase can be performed.
If the programming and erasure endurance is n (n = 100), each block can be erased n times.
For example, if a 4-Kbyte block A is erased after writing 1 word data 2,048 times, each to a different address,
this counts as one programming and erasure endurance. Data cannot be written to the same address more
than once without erasing the block (rewrite prohibited).
3. n denotes the number of blocks to erase.
Table 5.9 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics
(at Topr = 0 to 60°C)
200
4
n (3)
15
cycle
s
Programming and erasure endurance
(2)
Word program time (VCC = 5.0 V)
Lock bit program time
Block erase time
4-Kbyte block
(VCC = 5.0 V)
8-Kbyte block
32-Kbyte block
64-Kbyte block
Erase all unlocked blocks time
Flash memory circuit stabilization wait time
Parameter
Min.
Standard
Unit
Max.
Typ.
25
0.3
0.5
0.8
Symbol
-
tps
100
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M306NMFJGP#U3 功能描述:IC M16C MCU FLASH 128LQFP RoHS:是 類(lèi)別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:M16C™ M16C/60/6NM 標(biāo)準(zhǔn)包裝:160 系列:S08 核心處理器:S08 芯體尺寸:8-位 速度:40MHz 連通性:I²C，LIN，SCI，SPI 外圍設(shè)備:LCD，LVD，POR，PWM，WDT 輸入/輸出數(shù):53 程序存儲(chǔ)器容量:32KB（32K x 8） 程序存儲(chǔ)器類(lèi)型:閃存 EEPROM 大小:- RAM 容量:1.9K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 12x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:64-LQFP 包裝:托盤(pán)
M306NMFJTGP 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Renesas MCU
M306NMFJVGP 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Renesas MCU
M306NMME-XXXGP 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Renesas MCU
M306NMMG-XXXGP 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Renesas MCU
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