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參數(shù)資料
| 型號： | M30L40C-E3/4W |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 124K |
| 代理商： | M30L40C-E3/4W |
New Product
M30L40C
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89012
Revision: 27-Aug-08
430
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection applications.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
40 V
EAS
20 mJ
IFSM
280 A
VF at IF = 15 A
0.413 V
TJ max.
150 °C
TO-220AB
CASE
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M30L40C
UNIT
Maximum repetitive peak reverse voltage
VRRM
40
V
Maximum average forward rectified current (Fig. 1)
total device
per diode
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
280
A
Peak repetitive reverse current per diode at tp = 2 s, 1 kHz
IRRM
1.0
A
Non-repetitive avalanche energy at 25 °C, IAS = 2 A, L = 10 mH per diode
EAS
20
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
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