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參數(shù)資料
| 型號： | M30LW128D110ZE6T |
| 廠商： | 意法半導體 |
| 英文描述： | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| 中文描述： | 128兆位（兩個64兆比特，x8/x16，統(tǒng)一座，快閃記憶體）3V電源，多記憶體產(chǎn)品 |
| 文件頁數(shù)： | 49/57頁 |
| 文件大?。?/td> | 860K |
| 代理商： | M30LW128D110ZE6T |
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M30LW128D
Figure 22. Erase Suspend & Resume Flowchart and Pseudo Code
Note: 1. The Program/ Erase Suspend command must be issued to the same address as the current Erase command.
2. The Read Status Register command must be issued to the same address as the Program/ Erase Suspend command.
3. The Program/ Erase Resume command must be issued to the same address as the Program/ Erase Suspend command.
AI07516
Read Status
Register
(2)
YES
NO
b7 = 1
YES
NO
b6 = 1
Erase Continues
Write FFh
Program/Erase Suspend Command:
– write B0h to BA
do:
– read status register
while b7 = 1
If b6 = 0, Erase completed
Read Memory Array command:
– write FFh
– one or more data reads
from other blocks
Write D0h
Add BA
(3)
Read data from
another block
or Program
Start
Write B0h
Add BA
(1)
Erase Complete
Write FFh
Read Data
Program/Erase Resume command:
– write D0h to BA
to resume the Erase operation
– if the Program operation completed
then this is not necessary. The device
returns to Read mode as normal
(as if the Program/Erase suspend
was not issued).
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