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參數(shù)資料
| 型號(hào)： | M368L6523BUN-LB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| 中文描述： | DDR SDRAM的緩沖模塊184pin緩沖模塊基于512Mb乙芯片與64/72-bit非ECC / ECC的66 TSOP-II |
| 文件頁(yè)數(shù)： | 16/25頁(yè) |
| 文件大?。?/td> | 464K |
| 代理商： | M368L6523BUN-LB3 |
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DDR SDRAM
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 1.1 June 2005
17.3 64Mx72 (M381L6523BT(U))
Tolerances : ± 0.005(.13) unless otherwise specified.
The used device is 64Mx8 DDR SDRAM, TSOPII.
DDR SDRAM Part No : K4H510838B
5.25 ± 0.005
5.077
Units : Inches (Millimeters)
0.050
0.0078 ± 0.006
(0.20 ± 0.15)
0.100
(2.30)
0.393
(10.00)
(1.270)
0.100
(2.50
)
Detail B
A
B
(128.950)
(133.350 ± 0.13)
0.250
(6.350)
Detail A
0.071
(1.80)
0.039 ± 0.002
(1.000 ± 0.050)
(3.80)
2.175
(64.77)
(49.53)
(17.8
0
)
2.55
1.95
2.500 +0.1/-0.0
0.7
0.10 M
C
BA
0.1496
(3.00 Min)
0.118 Min
R (2.00)
0.0787
(4.00 ± 0.1)
0.1575 ± 0.004
1.25
± 0.006
(31.75 ±0.15)
(4.00
±
0.
1
)
(2X)
0.157
0.10 M
C A M B
(3.00 Min)
0.118 Min
0.07 Max
0.050 ± 0.0039
(1.270 ± 0.10)
(1.20 Max)
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| M36L0T7050T0 | 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M368L6523CUS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L6523CUS-CCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L6523DUS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
| M368L6523DUS-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) |
| M368L6523DUS-CCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) |
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