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參數(shù)資料
| 型號(hào)： | M36L0R7040B0 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
| 中文描述： | 128兆位（多銀行，多層次，突發(fā)）閃存和16兆移動(dòng)存儲(chǔ)芯片，1.8V電源，多芯片封裝 |
| 文件頁數(shù)： | 14/18頁 |
| 文件大小： | 119K |
| 代理商： | M36L0R7040B0 |
M36L0R7040T0, M36L0R7040B0
14/18
Table 7. Flash Memory DC Characteristics - Voltages
Table 8. PSRAM DC Characteristics
Symbol
Parameter
Note: 1. Average AC current, cycling at t
AVAV
minimum.
2. E1
P
= V
IL
, E2
P
= V
IH
, UB
P
OR/AND LB
P
= V
IL
, V
IN
= V
IH
OR V
IL
.
3. E1
P
≤
0.2V or E2
P
≥
V
DDQ
–0.2V, UB
P
OR/AND LB
P
≤
0.2V, V
IN
≤
0.2V or V
IN
≥
V
DDQ
–0.2V.
4. Output disabled.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP1
V
PPF
Program Voltage-Logic
Program, Erase
1.1
1.8
3.3
V
V
PPH
V
PPF
Program Voltage Factory
Program, Erase
8.5
9.0
12.6
V
V
PPLK
Program or Erase Lockout
0.4
V
V
LKO
V
DDF
Lock Voltage
1
V
V
RPH
RP
F
pin Extended High Voltage
3.3
V
Test Condition
Min
Max
Unit
I
CC1
V
CC
Active Current
V
DDP
= 1.95V,
V
IN
= V
IH
or V
IL
,
E1
P
= V
IL
and E2
P
= V
IH
,
I
OUT
= 0mA
t
AVAV
Read /
t
AVAV
Write =
minimum
20
mA
I
CC2
t
AVAV
Read /
t
AVAV
Write =
maximum
3
mA
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDP
–1
1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDP
–1
1
μA
I
PD
Deep Power Down Current
V
DDP
= 1.95V,
E1
P
≥
V
DDP
– 0.2V or E1
P
≤
V
IL
,
V
IN
≥
V
DDP
– 0.2V or V
IN
≤
0.2V
10
μA
I
SB
Standby Supply Current
CMOS
V
DDP
= 1.95V,
E1
P
= E2
P
≥
V
DDP
– 0.2V,
I
OUT
= 0mA
110
μA
V
IH (1)
Input High Voltage
0.8V
DDP
V
DDP
+ 0.2
V
V
IL (2)
Input Low Voltage
–0.3
0.4
V
V
OH
Output High Voltage
I
OH
= –0.5mA
V
DDP
– 0.2
V
V
OL
Output Low Voltage
I
OL
= 1mA
0.2
V
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PDF描述 |
|---|---|
| M36L0R7040B0ZAQE | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
| M36L0R7040B0ZAQF | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
| M36L0R7040B0ZAQT | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
| M36L0R7040T0 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
| M36L0R7040T0ZAQE | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36L0R7040B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
| M36L0R7040B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
| M36L0R7040B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
| M36L0R7040T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
| M36L0R7040T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package |
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