參數(shù)資料
型號(hào)： M36L0R7040T0
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
中文描述： 128兆位（多銀行，多層次，突發(fā)）閃存和16兆移動(dòng)存儲(chǔ)芯片，1.8V電源，多芯片封裝
文件頁(yè)數(shù)： 12/18頁(yè)
文件大?。?/td> 119K
代理商： M36L0R7040T0
M36L0R7040T0, M36L0R7040B0
12/18
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in
Table 4., Operating and
AC Measurement Conditions
. Designers should
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Table 4. Operating and AC Measurement Conditions
Figure 5. AC Measurement I/O Waveform
Figure 6. AC Measurement Load Circuit
Table 5. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
Flash Memory
PSRAM
Unit
Min
Max
Min
Max
V
DDF
Supply Voltage
1.7
1.95
–
–
V
V
DDP
Supply Voltage
–
–
1.7
1.95
V
V
DDQF
Supply Voltage
1.7
1.95
–
–
V
V
PPF
Supply Voltage (Factory environment)
8.5
12.6
–
–
V
V
PPF
Supply Voltage (Application
environment)
–0.4
V
DDQ
+0.4
–
–
V
Ambient Operating Temperature
–25
85
–25
85
°C
Load Capacitance (C
L
)
30
50
pF
Output Circuit Resistors (R
1
, R
2
)
16.7
16.7
k
Input Rise and Fall Times
5
5
ns
Input Pulse Voltages
0 to V
DDQ
0 to V
DDQ
V
Input and Output Timing Ref. Voltages
V
DDQ
/2
V
DDQ
/2
V
AI06161
VDDQ
0V
VDDQ/2
AI08364B
V
DDQ
C
L
C
L
includes JIG capacitance
R
1
DEVICE
UNDER
TEST
0.1μF
V
DDQ
R
2
0.1μF
V
DDF
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V
15
pF
相關(guān)PDF資料
PDF描述
M36L0R7040T0ZAQE 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040T0ZAQF 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040T0ZAQT 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36LLR8760D1 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
M36LLR8760DF 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36L0R7040T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
M36L0R7040U1Z85U 制造商:STMicroelectronics 功能描述:
M36L0R7040U3ZA5U 制造商:Micron Technology Inc 功能描述:MCP - Tape and Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*