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參數(shù)資料
| 型號： | M36L0T7050B0 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| 中文描述： | 128Mbit（多銀行，多層次，突發(fā)）閃存32兆（2米× 16）移動存儲芯片，多芯片封裝 |
| 文件頁數(shù)： | 6/18頁 |
| 文件大小： | 361K |
| 代理商： | M36L0T7050B0 |
M36L0T7050T0, M36L0T7050B0
14/18
Table 8. Flash Memory DC Characteristics - Voltages
Table 9. PSRAM DC Characteristics
Note: 1. Maximum DC voltage on input and I/O pins is VDDP +0.2V.
During voltage transitions, input may positive overshoot to VDDP + 1.0V for a period of up to 5ns.
2. Minimum DC voltage on input or I/O pins is –0.3V.
During voltage transitions, input may positive overshoot to VSS + 1.0V for a period of up to 5ns.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
VIL
Input Low Voltage
–0.5
0.4
V
VIH
Input High Voltage
VDDQ –0.4
VDDQ + 0.4
V
VOL
Output Low Voltage
IOL = 100A
0.1
V
VOH
Output High Voltage
IOH = –100A
VDDQ –0.1
V
VPP1
VPPF Program Voltage-Logic
Program, Erase
1.1
1.8
3.3
V
VPPH
VPPF Program Voltage Factory
Program, Erase
8.5
9.0
12.6
V
VPPLK
Program or Erase Lockout
0.4
V
VLKO
VDDF Lock Voltage
1V
VRPH
RPF pin Extended High Voltage
3.3
V
Symbol
Parameter
Test Condition
Min
Max
Unit
ICC1
VDDP Active Current
VDDP = 3.3V,
VIN = VIH or VIL,
E1P = VIL and E2P = VIH,
IOUT = 0mA
tRC / tWC =
minimum
30
mA
ICC2
tRC / tWC =
1 s
3mA
ICC3
VDDP Page Read Current
VDDP = 3.3V,
VIN = VIH or VIL,
E1P = VIL and E2P = VIH,
IOUT = 0mA, tPRC = min.
10
mA
ICCPD
VDDP Power Down Current
VDDP = 3.3V,
VIN = VIH or VIL,
E2P ≤ 0.2V
Deep
Power-
Down
10
A
ICCP4
4 Mb PAR
40
A
ICCP8
8 Mb PAR
50
A
ICCP16
16 Mb PAR
65
A
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDP
–1
1
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDDP
–1
1
A
ISB
Standby Supply Current CMOS
VDDP = 3.3V,
VIN ≤ 0.2V or VIN ≥ VDDP –0.2V,
E1P = E2P ≥ VDDP –0.2V
100
A
VIH
(1)
Input High Voltage
0.8VDDP
VDDP + 0.2
V
VIL
(2)
Input Low Voltage
–0.3
0.2VDDP
V
VOH
Output High Voltage
VDDP = 2.7V, IOH = –0.5mA
2.4
V
VOL
Output Low Voltage
IOL = 1mA
0.4
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36L0T7050B0ZAQE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| M36L0T7050B0ZAQF | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
| M36L0T7050B2 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
| M36L0T7050B2ZAQ | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
| M36L0T7050B2ZAQE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
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