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參數(shù)資料
| 型號： | M36L0T7050T0 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| 中文描述： | 128Mbit（多銀行，多層次，突發(fā)）閃存32兆（2米× 16）移動存儲芯片，多芯片封裝 |
| 文件頁數(shù)： | 5/18頁 |
| 文件大?。?/td> | 361K |
| 代理商： | M36L0T7050T0 |
13/18
M36L0T7050T0, M36L0T7050B0
Table 7. Flash DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. VDD Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDQ
±2
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDDQ
±10
A
IDD1
Supply Current
Asynchronous Read (f=6MHz)
EF = VIL, GF = VIH
14
16
mA
Supply Current
Synchronous Read (f=40MHz)
4 Word
13
17
mA
8 Word
15
19
mA
16Word
17
21
mA
Continuous
21
26
mA
Supply Current
Synchronous Read (f=50MHz)
4 Word
16
19
mA
8 Word
19
23
mA
16 Word
22
26
mA
Continuous
23
28
mA
IDD2
Supply Current
(Reset)
RPF = VSS ± 0.2V
25
75
A
IDD3
Supply Current (Standby)
EF = VDDF ± 0.2V
25
75
A
IDD4
Supply Current (Automatic
Standby)
EF = VIL, GF = VIH
25
75
A
IDD5
(1)
Supply Current (Program)
VPPF = VPPH
815
mA
VPPF = VDDF
10
20
mA
Supply Current (Erase)
VPPF = VPPH
815
mA
VPPF = VDDF
10
20
mA
IDD6
(1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
Read in another Bank
24
36
mA
Program/Erase in one
Bank, Synchronous
Read in another Bank
40
55
mA
IDD7
(1)
Supply Current Program/ Erase
Suspended (Standby)
E = VDD ± 0.2V
25
75
A
IPP1
(1)
VPPF Supply Current (Program)
VPPF = VPPH
25
mA
VPPF = VDDF
0.2
5
A
VPPF Supply Current (Erase)
VPPF = VPPH
25
mA
VPPF = VDDF
0.2
5
A
IPP2
VPPF Supply Current (Read)
VPPF ≤ VDDF
0.2
5
A
IPP3
(1)
VPPF Supply Current (Standby)
VPPF ≤ VDDF
0.2
5
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36L0T7050T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| M36L0T7050T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| M36L0T7050T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| M36L0T7050T2 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
| M36L0T7050T2ZAQ | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
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