參數(shù)資料
型號: M36L0T7050T0ZAQT
廠商: 意法半導(dǎo)體
英文描述: 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
中文描述: 128Mbit(多銀行,多層次,突發(fā))閃存32兆(2米× 16)移動存儲芯片,多芯片封裝
文件頁數(shù): 17/18頁
文件大?。?/td> 361K
代理商: M36L0T7050T0ZAQT
M36L0T7050T0, M36L0T7050B0
8/18
FUNCTIONAL DESCRIPTION
The PSRAM and Flash memory components have
separate power supplies but share the same
grounds. They are distinguished by three Chip En-
able inputs: EF for the Flash memory and E1P and
E2P for the PSRAM.
Recommended operating conditions do not allow
more than one device to be active at a time. The
most common example is simultaneous read oper-
ations in the Flash memory and the PSRAM which
would result in a data bus contention. Therefore it
is recommended to put the other device in the high
impedance state when reading the selected de-
vice.
Figure 4. Functional Block Diagram
AI08736
RPF
WPF
E1P
E2P
GP
WP
DQ0-DQ15
VDDF VPPF
A21-A22
32 Mbit
PSRAM
GF
WF
UBP
LBP
WAITF
KF
LF
VSS
128 Mbit
Flash
Memory
VDDP
EF
A0-A20
VDDQ
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參數(shù)描述
M36L0T7050T2 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
M36L0T7050T2ZAQ 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
M36L0T7050T2ZAQE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36L0T7050T2ZAQF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
M36L0T7050T2ZAQT 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package