- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377825 > M36LLR8760T (意法半導(dǎo)體) 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PDF資料下載
參數(shù)資料
| 型號(hào)： | M36LLR8760T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| 中文描述： | 256 128兆位（多銀行，多層次，突發(fā)）64兆位閃存（突發(fā)）移動(dòng)存儲(chǔ)芯片，1.8V電源，多芯片封裝 |
| 文件頁(yè)數(shù)： | 4/19頁(yè) |
| 文件大?。?/td> | 427K |
| 代理商： | M36LLR8760T |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
4/19
SUMMARY DESCRIPTION
The
M36LLR8760T1,
M36LLR8760M1 and M36LLR8760B1 combine
three memory devices in a Multi-Chip Package:
a 256-Mbit, Multiple Bank Flash memory, the
M30L0R8000(T/B)0 (Flash 1)
a 128-Mbit, Multiple Bank Flash memory, the
M58LR128GT/B (Flash 2)
a 64-Mbit PseudoSRAM, the M69KB096AA.
For detailed information on how to use the memo-
ry components, refer to the M30L0R8000(T/B)0,
M58LR128GT/B and M69KB096AA datasheets
which are available from your local STMicroelec-
tronics distributor and should be read in conjunc-
tion with the M36LLR8760x1 datasheet.
What differs between the M36LLR8760T1,
M36LLR8760D1 and M36LLR8760B1 is the con-
figuration of the two Flash memories:
in the M36LLR8760T1, Flash 1 and Flash 2
both have a Top Configuration (Parameter
Blocks located at the top of the address
space).
in the M36LLR8760D1, Flash 1 has a Bottom
Configuration (Parameter Blocks at the
bottom of the address space) and Flash 2 has
a Top Configuration.
In the M36LLR8760M1, Flash 1 has a Top
Configuration and Flash 2 has a Bottom
Configuration.
In the M36LLR8760B1, both Flash 1 and
Flash 2 have a Bottom Configuration.
M36LLR8760D1,
■
■
■
■
■
■
■
Recommended operating conditions do not allow
more than one memory to be active at the same
time.
The memories are offered in a Stacked LFBGA88
(8 x 10mm, 8x10 ball array, 0.8mm pitch) pack-
age.
In addition to the standard version, the package is
also available in Lead-free version, in compliance
with JEDEC Std J-STD-020B, the ST ECOPACK
7191395 Specification, and the RoHS (Restriction
of Hazardous Substances) directive. All packages
are compliant with Lead-free soldering processes.
The memory is supplied with all the bits erased
(set to ‘1’).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36LLR8760T1 | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760TT | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760D | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR876B0 | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR876B0E | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36LLR8760T1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760TT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR876B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR876B0E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M-36M25M-10M | 制造商:Pan Pacific 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。