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參數資料
| 型號： | M36W0R6030B0 |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，突發(fā)）閃存和8兆位（512KB的× 16）的SRAM，多芯片封裝 |
| 文件頁數： | 7/26頁 |
| 文件大小： | 168K |
| 代理商： | M36W0R6030B0 |
7/26
M36W0R6030T0, M36W0R6030B0
SRAM Lower Byte Enable (LB
S
).
The
Byte Enable input enables the lower byte for
SRAM (DQ0-DQ7). LB
S
is active low.
V
DDF
Supply Voltage.
V
DDF
provides the power
supply to the internal core of the Flash memory
component. It is the main power supplies for all
Flash memory operations (Read, Program and
Erase).
V
DDS
Supply Voltage.
V
DDS
provides the power
supply to the internal core of the SRAM device. It
is the main power supply for all SRAM operations.
V
DDQ
Supply Voltage.
V
DDQ
provides the power
supply for the Flash Memory and SRAM I/O pins.
This allows all Outputs to be powered indepen-
dently of the Flash Memory and SRAM core power
supplies: V
DDF
and V
DDS
, respectively.
V
PPF
Program Supply Voltage.
V
PPF
is both a
Flash memory control input and a Flash memory
power supply pin. The two functions are selected
by the voltage range applied to the pin.
If V
PPF
is kept in a low voltage range (0V to V
DDQ
)
V
PPF
is seen as a control input. In this case a volt-
age lower than V
PPLKF
gives an absolute protec-
Lower
tion against Program or Erase, while V
PPF
> V
PP1F
enables these functions (see Tables
6
and
7
, DC
Characteristics for the relevant values). V
PPF
is
only sampled at the beginning of a Program or
Erase; a change in its value after the operation has
started does not have any effect and Program or
Erase operations continue.
If V
PPF
is in the range of V
PPHF
it acts as a power
supply pin. In this condition V
PPF
must be stable
until the Program/Erase algorithm is completed.
V
SS
Ground.
V
SS
is the common ground refer-
ence for all voltage measurements in the Flash
(core and I/O Buffers) and SRAM chips.
Note: Each Flash memory device in a system
should have its supply voltage (V
DDF
) and the
program supply voltage V
PPF
decoupled with a
0.1μF ceramic capacitor close to the pin (high
frequency, inherently low inductance capaci-
tors should be as close as possible to the
package). See
Figure 7., AC Measurement
Load Circuit
. The PCB track widths should be
sufficient to carry the required V
PPF
program
and erase currents.
相關PDF資料 |
PDF描述 |
|---|---|
| M36W0R6030B0ZAQ | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQE | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQF | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQT | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M36W0R6030B0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
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