參數(shù)資料
型號(hào)： M36W0R6030B0ZAQF
廠(chǎng)商： 意法半導(dǎo)體
英文描述： 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
中文描述： 64兆位（4Mb的x16插槽，多銀行，突發(fā)）閃存和8兆位（512KB的× 16）的SRAM，多芯片封裝
文件頁(yè)數(shù)： 15/26頁(yè)
文件大?。?/td> 168K
代理商： M36W0R6030B0ZAQF
15/26
M36W0R6030T0, M36W0R6030B0
Table 7. Flash Memory DC Characteristics - Voltages
Table 8. SRAM DC Characteristics
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP1
V
PP
Program Voltage-Logic
Program, Erase
1.1
1.8
3.3
V
V
PPH
V
PP
Program Voltage Factory
Program, Erase
11.4
12
12.6
V
V
PPLK
Program or Erase Lockout
0.4
V
V
LKO
V
DD
Lock Voltage
1
V
V
RPH
RP pin Extended High Voltage
3.3
V
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage
Current
0V
≤
V
IN
≤
V
DD
±1
μA
I
LO
Output Leakage
Current
0V
≤
V
OUT
≤
V
DD
, Output disabled
±1
μA
I
DDS
V
DD
Standby
Current
E1
S
≥
V
DD
– 0.2V or E2
S
≤
0.2V
V
IN
≥
V
DD
– 0.2V or V
IN
≤
0.2V
f = f
max
(Address and Data inputs only)
f = 0 (G
S
, W
S
, UB
S
and LB
S
)
2
25
μA
E1
S
≥
V
DD
– 0.2V or E2
S
≤
0.2V
V
IN
≥
V
DD
– 0.2V or V
IN
≤
0.2V
f = 0, V
DD
(max)
2
25
μA
I
DD
Supply Current
f = f
max
= 1/t
AVAV
, CMOS levels V
DD
= V
DD
(max)
8
15
mA
I
OUT
= 0 mA, f = 1MHz, CMOS levels
1
5
mA
V
IL
Input Low
Voltage
–0.2
0.4
V
V
IH
Input High
Voltage
1.4
V
DD
+0.2
V
V
OL
Output Low
Voltage
I
OL
= 0.1mA, V
DD
= 1.65V
0.2
V
V
OH
Output High
Voltage
I
OH
=
0.1mA, V
DD
= 1.65V
1.4
V
相關(guān)PDF資料
PDF描述
M36W0R6030B0ZAQT 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030T0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030T0ZAQ 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030T0ZAQE 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030T0ZAQF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36W0R6030B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030T0 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030T0ZAQ 制造商:Micron Technology Inc 功能描述:
M36W0R6030T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
M36W0R6030T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
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