參數(shù)資料
型號(hào)： M36W0R6050T1
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
中文描述： 64兆位（4兆】16日，多銀行，突發(fā)）閃存和32兆位（2字節(jié)】16）移動(dòng)存儲(chǔ)芯片，多芯片封裝
文件頁(yè)數(shù)： 1/22頁(yè)
文件大?。?/td> 159K
代理商： M36W0R6050T1
January 2007
1
1/22
1
M36W0R6050T1
M36W0R6050B1
64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory
and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package
Features
■
Multi-Chip Package
– 1 die of 64 Mbit (4 Mb × 16) Flash memory
– 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM
■
Supply voltage
– V
DDF
= V
DDP
= V
DDQF
= 1.7 V to 1.95 V
■
Low power consumption
■
Electronic signature
– Manufacturer Code: 20h
– Device code (top flash configuration),
M36W0R6050T1: 8810h
– Device code (bottom flash configuration),
M36W0R6050B1: 8811h
■
Package
– ECOPACK
Flash memory
■
Programming time
– 8 μs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■
Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
■
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66 MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70 ns
■
Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
■
Block locking
– All blocks locked at Power-up
– Any combination of blocks can be locked
– WP
F
for Block Lock-Down
■
Security
– 128-bit user programmable OTP cells
– 64-bit unique device number
■
Common Flash Interface (CFI)
■
100 000 program/erase cycles per block
PSRAM
■
Access time: 70 ns
■
Asynchronous Page Read
– Page size: 8 words
– First access within page: 70 ns
– Subsequent read within page: 20 ns
■
Three Power-down modes
– Deep Power-Down
– Partial Array Refresh of 4 Mbits
– Partial Array Refresh of 8 Mbits
FBGA
Stacked TFBGA88
(ZA)
www.st.com
相關(guān)PDF資料
PDF描述
M36W0R6050T1ZAQE 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M36W0R6050T1ZAQF 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M39432 Single Chip 4Mbit Flash and 256Kbit Parallel EEPROM Memory(單片4Mb閃速和256Kb并行EEPROM)
M40Z111MH6 5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
M40Z111MH6TR 5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36W0R6050T1ZAQE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36W0R6050T1ZAQF 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M36W0R6050T3 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
M36W0R6050T3ZAQE 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
M36W0R6050T3ZAQF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*