參數(shù)資料
型號(hào): M36W0R6050T1ZAQF
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
中文描述: 64兆位(4兆】16日,多銀行,突發(fā))閃存和32兆位(2字節(jié)】16)移動(dòng)存儲(chǔ)芯片,多芯片封裝
文件頁數(shù): 12/22頁
文件大小: 159K
代理商: M36W0R6050T1ZAQF
Signal descriptions
M36W0R6050T1, M36W0R6050B1
12/22
2.20
V
PPF
program supply voltage
V
PPF
is both a Flash Memory control input and a Flash Memory power supply pin. The two
functions are selected by the voltage range applied to the pin.
If V
PPF
is kept in a low voltage range (0V to V
DDQF
) V
PPF
is seen as a control input. In this
case a voltage lower than V
PPLKF
gives an absolute protection against Program or Erase,
while V
PPF
> V
PP1F
enables these functions (see the M58WR064HT/B datasheet for the
relevant values). V
PPF
is only sampled at the beginning of a Program or Erase; a change in
its value after the operation has started does not have any effect and Program or Erase
operations continue.
If V
PPF
is in the range of V
PPHF
it acts as a power supply pin. In this condition V
PPF
must be
stable until the Program/Erase algorithm is completed.
2.21
V
SS
ground
V
SS
is the common ground reference for all voltage measurements in the Flash memory
(core and I/O Buffers) and PSRAM components.
Note:
Each Flash memory device in a system should have its supply voltages (V
DDF
, V
DDQF
) and
the program supply voltage V
PPF
decoupled with a 0.1μF ceramic capacitor close to the pin
(high frequency, inherently low inductance capacitors should be as close as possible to the
package). See
Figure 5: AC measurement load circuit
. The PCB track widths should be
sufficient to carry the required V
PPF
program and erase currents.
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