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參數(shù)資料
| 型號(hào)： | M36W108AB100ZM5T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| 中文描述： | 8兆1兆× 8，啟動(dòng)塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲(chǔ)產(chǎn)品 |
| 文件頁數(shù)： | 1/35頁 |
| 文件大小： | 247K |
| 代理商： | M36W108AB100ZM5T |
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NOT FOR NEW DESIGN
May 1999
This is information on a product still in production but not recommended for new designs.
M36W108T
M36W108B
8 Mbit (1Mb x8, Boot Block) Flash Memory and
1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product
I
M36W108T and M36W108B are replaced
respectively by the M36W108AT and
M36W108AB
I
SUPPLY VOLTAGE
– V
CCF
= V
CCS
= 2.7V to 3.6V: for Program,
Erase and Read
I
ACCESS TIME: 100ns
I
LOW POWER CONSUMPTION
– Read: 40mA max. (SRAM chip)
– Stand-by: 30μA max. (SRAM chip)
– Read: 10mA max. (Flash chip)
– Stand-by: 100μA max. (Flash chip)
FLASH MEMORY
I
8 Mbit (1Mb x 8) BOOT BLOCK ERASE
I
PROGRAMMING TIME: 10μs typical
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PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy Output
I
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main Blocks
I
BLOCK, MULTI-BLOCK and CHIP ERASE
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ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
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100,000 PROGRAM/ERASE CYCLES per
BLOCK
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ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M36W108T: D2h
– Device Code, M36W108B: DCh
SRAM
I
1 Mbit (128Kb x 8)
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POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
I
LOW V
CC
DATA RETENTION: 2V
BGA
LGA
LBGA48 (ZM)
6 x 8 solder balls
LGA48 (ZN)
6 x 8 solder lands
Figure 1. Logic Diagram
AI02509
20
A0-A19
W
DQ0-DQ7
VCCF
M36W108T
M36W108B
EF
VSS
8
G
RP
RB
VCCS
E1S
E2S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W108AT120ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB120ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T100ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108B100ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T120ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W108AB100ZM6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB100ZN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB100ZN5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB100ZN6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB120ZM1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
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