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參數(shù)資料
| 型號： | M36W108AB120ZN5T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TV 4C 4#12 SKT RECP |
| 中文描述： | 8兆1兆× 8，啟動塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲產(chǎn)品 |
| 文件頁數(shù)： | 20/35頁 |
| 文件大?。?/td> | 247K |
| 代理商： | M36W108AB120ZN5T |
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M36W108T, M36W108B
20/35
Table 19. Flash Write AC Characteristics, Chip Enable Controlled
(T
A
= 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; V
CCF
= 2.7V to 3.6V)
Note: 1. Sampled only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Symbol
Alt
Parameter
Flash Memory Chip
Unit
100
120
C
L
= 30pF
C
L
= 100pF
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
100
120
ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
50
50
ns
t
DVEH
t
DS
Input Valid to Chip Enable High
50
50
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
0
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
30
20
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
0
0
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
50
50
ns
t
GHEL
Output Enable High Chip Enable Low
0
0
ns
t
VCHWL
t
VCS
V
CC
High to Write Enable Low
50
50
μs
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
0
0
ns
t
PHPHH
(1,2)
t
VIDR
RP Rise Time to V
ID
500
500
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
EHRL
(1)
t
BUSY
Program Erase Valid to RB Delay
90
90
ns
t
PHWL
(1)
t
RSP
RP High to Write Enable Low
4
4
μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W108T100ZN5T | TV 5C 5#16 PIN RECP |
| M36W108B100ZN5T | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:12; Connector Shell Size:15; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| M36W108AT100ZM1T | Coaxial Cable; Impedance:50ohm; Conductor Size AWG:29; No. Strands x Strand Size:Solid; Voltage Nom.:30V |
| M36W108AB100ZM1T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZM1T | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W108AB120ZN6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108ABZM | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108ABZN | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT100ZM1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
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