參數(shù)資料
型號(hào): M36W108AB120ZN6T
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
中文描述: 8兆1兆× 8,啟動(dòng)塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲(chǔ)產(chǎn)品
文件頁數(shù): 22/35頁
文件大小: 247K
代理商: M36W108AB120ZN6T
M36W108T, M36W108B
22/35
Table 20. Flash Data Polling and Toggle Bits AC Characteristics
(1)
(T
A
= 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; V
CCF
= 2.7V to 3.6V)
Note: 1. All other timings are defined in Read AC Characteristics table.
Symbol
Parameter
Flash Memory Chip
Unit
100
120
C
L
= 30pF
C
L
= 100pF
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid (Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid (Chip Erase, W
Controlled)
1.0
60
1.0
60
sec
t
EHQ7V
Chip Enable High to DQ7 Valid (Program, EF Controlled)
10
2400
10
2400
μs
Chip Enable High to DQ7 Valid (Chip Erase, EF
Controlled)
1.0
60
1.0
60
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
40
50
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
μs
Write Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
μs
Chip Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
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