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參數(shù)資料
| 型號(hào)： | M36W108AT100ZN6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| 中文描述： | 8兆1兆× 8，啟動(dòng)塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲(chǔ)產(chǎn)品 |
| 文件頁(yè)數(shù)： | 6/35頁(yè) |
| 文件大?。?/td> | 247K |
| 代理商： | M36W108AT100ZN6T |
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M36W108T, M36W108B
6/35
FLASH MEMORY COMPONENT
Organization and Architecture
Organization.
The Flash chip is organized as
1Mbit x 8. The memory uses the address inputs
A0-A19 and the Data Input/Outputs DQ0-DQ7.
Memory control is provided by Chip Enable (EF),
Output Enable (G) and Write Enable (W) inputs.
Erase and Program operations are controlled by
an internal Program/Erase Controller (P/E.C.).
Status Register data output on DQ7 provides a
Data Polling signal, while Status Register data out-
puts on DQ6 and DQ2 provide Toggle signals to
indicate the state of the P/E.C. operations. A
Ready/Busy (RB) output indicates the completion
of the internal algorithms.
Memory Blocks.
The device features asymmetri-
cally blocked architecture providing system mem-
ory integration. Both Top and Bottom Boot Block
devices have an array of 19 blocks, one Boot
Block of 16K Bytes, two Parameter Blocks of 8K
Bytes, one Main Block of 32K Bytes and fifteen
Main Blocks of 64K Bytes. The Top Boot Block
version has the Boot Block at the top of the mem-
ory address space and the Bottom Boot Block ver-
sion locates the Boot Block starting at the bottom.
The memory maps and block address tables are
showed in Figures 4, 5 and Tables 4, 5. Each
block can be erased separately, any combination
of blocks can be specified for multi-block erase or
the entire chip may be erased. The Erase opera-
tions are managed automatically by the P/E.C.
The block erase operation can be suspended in
order to read from or program to any block not be-
ing erased, and then resumed.
Device Operations
The following operations can be performed using
the appropriate bus cycles: Read Array, Write
command, Output Disable, Standby and Reset
(see Table 6).
Read.
Read operations are used to output the
contents of the Memory Array, the Electronic Sig-
nature or the Status Register. Both Chip Enable
(EF) and Output Enable (G) must be low, with
Write Enable (W) high, in order to read the output
of the memory.
Table 4. Top Boot Block, Flash Block Address
Size (KWord)
16
8
8
32
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
Address Range
FC000h-FFFFFh
FA000h-FBFFFh
F8000h-F9FFFh
F0000h-F7FFFh
E0000h-EFFFFh
D0000h-DFFFFh
C0000h-CFFFFh
B0000h-BFFFFh
A0000h-AFFFFh
90000h-9FFFFh
80000h-8FFFFh
70000h-7FFFFh
60000h-6FFFFh
50000h-5FFFFh
40000h-4FFFFh
30000h-3FFFFh
20000h-2FFFFh
10000h-1FFFFh
00000h-0FFFFh
Table 5. Bottom Boot Block, Flash Block
Address
Size (KWord)
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
32
8
8
16
Address Range
F0000h-FFFFFh
E0000h-EFFFFh
D0000h-DFFFFh
C0000h-CFFFFh
B0000h-BFFFFh
A0000h-AFFFFh
90000h-9FFFFh
80000h-8FFFFh
70000h-7FFFFh
60000h-6FFFFh
50000h-5FFFFh
40000h-4FFFFh
30000h-3FFFFh
20000h-2FFFFh
10000h-1FFFFh
08000h-0FFFFh
06000h-07FFFh
04000h-05FFFh
00000h-03FFFh
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W108AB100ZN6T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZN6T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB120ZN6T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T100ZN6T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108B100ZN6T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W108AT120ZM1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZM5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZM6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZN5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
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