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M36W108T, M36W108B
26/35
Table 21. SRAM Read AC Characteristics
(T
A
= 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; V
CCS
= 2.7 V to 3.6 V)
Note: 1. Sampled only. Not 100% tested.
2. See Flash-SRAM Switching Waveforms.
Symbol
Parameter
SRAM Chip
Unit
100
C
L
= 100pF
Min
Max
t
AVAV
Read Cycle Time
100
ns
t
AVQV
Address Valid to Output Valid
100
ns
t
E1LQV
Chip Enable 1 Low to Output Valid
100
ns
t
E2HQV
Chip Enable 2 High to Output Valid
100
ns
t
GLQV
Output Enable Low to Output Valid
50
ns
t
E1LQX
Chip Enable 1 Low to Output Transition
10
ns
t
E2HQX
Chip Enable 2 High to Output Transition
10
ns
t
GLQX
Output Enable Low to Output Transition
5
ns
t
E1HQZ
Chip Enable 1 High to Output Hi-Z
0
30
ns
t
E2LQZ
Chip Enable 2 Low to Output Hi-Z
0
30
ns
t
GHQZ
Output Enable High to Output Hi-Z
0
30
ns
t
AXQX
Address Transition to Output Transition
15
ns
t
PU (1)
Chip Enable 1 Low or Chip Enable 2 High to Power Up
0
ns
t
PD (1)
Chip Enable 1 High or Chip Enable 2 Low to Power Down
100
ns
t
CCR (2)
Chip Enable Recovery Time
0
ns
Figure 14. SRAM Read Mode AC Waveforms, Address Controlled
Note: E1S = Low, E2S = High, G = Low, W = High.
AI02436
tAVAV
tAVQV
tAXQX
A0-A16
DQ0-DQ7
VALID
DATA VALID
DATA VALID
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W108AB120ZM1T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T100ZM1T | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes |
| M36W108B100ZM1T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T120ZM1T | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Jacket Color:Blue; Leaded Process Compatible:Yes; Voltage Nom.:30V RoHS Compliant: Yes |
| M36W108B120ZM1T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W108AT120ZM5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZM6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZN5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZN6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
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